ioaucti, Una..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX:
(973) 376-8960
BTA12, BTB12,T12xx
12 A Snubberless™, logic level and standard triacs
Features
•
•
•
•
Medium current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic for
insulated BTA
High commutation (4Q) or very high
commutation (3Q) capability
D
2
PAK
(T12-G)
I
2
PAK
(T12-R)
Applications
ON/OFF or phase angle function in applications
such as static relays, light dimmers and appliance
motors speed controllers.
The snubberless versions (BTA/BTB...W and T12
series) are especially recommended for use on
inductive loads, because of their high
commutation performances. The BTA series
provides an insulated tab (rated at 2500 V RMS),
TO-220AB Insulated
(BTA12)
TO-220AB
(BTB12)
Description
Available either in through-hole or surface-mount
packages, the
BTA12, BTB12 and T12xx
triac
series is suitable for general purpose mains
power AC switching.
Table 1.
Device summary
Parameter
RMS on-state current
Repetitive peak off-state voltage
Triggering gate current
Triggering gate current
T12XX
12
Symbol
'T(RMS)
BTA12*
1
'
12
BTB12
12
VDRM/VRRM
I
GT
(Snubberless)
I
GT
(Standard)
Insulated
600/800
10/35/50
-
600/800
5/10/35/50
35/50
600/800
5/10/35/50
35/50
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Characteristics
Table 2.
Symbol
RMS on-state current
(full sine wave)
Non repetitive surge peak on-state
current (full cycle, T, initial = 25° C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 xl
GT
, t
r
< 100ns
Absolute maximum ratings
Parameter
I
2
PAK/D
2
PAK/
TO-220AB
TO-220AB Ins.
F = 50 Hz
F = 60 Hz
t
p
= 1 0 ms
Value
T
C
=105°C
12
Unit
'T(RMS)
A
T
c
= 90° C
t = 20 ms
120
A
126
78
A
2
s
A/MS
V
A
W
°C
'TSM
t= 16.7ms
I
2
t
dl/dt
F = 120Hz
t
p
= 1 0 ms
t
p
= 20 us
Tj= 125° C
T, = 25° C
Tj=125°C
T,= 125°C
50
V
DRM
/V
RRM
Non repetitive surge peak off-state
VDSIV/VRSM voltage
+ 100
!QM
PG<AV)
T
stg
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
4
1
Tj
-40to + 150
- 4 0 t o + 125
Table 3.
Electrical characteristics (Tj = 25°C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
T12XX
BTA12/BTB12
Unit
T1210
T1235
Symbol
I
GT(1)
Test conditions
V
D
=12V
R
L
= 30 i
i
Quadrant
T1250
50
1.3
0.2
15
25
MAX.
30
MIN.
40
6.5
MIN.
2.9
6.5
12
60
500
80
1000
15
20
3.5
1
30
40
6.5
2.9
6.5
12
60
500
80
1000
35
50
50
70
10
10
15
25
35
50
50
70
TW
5
SW
10
CW
35
BW
50
mA
V
V
mA
mA
I -II -III
I - I I -III
I - I I -III
MAX.
MAX.
MIN.
MAX.
10
35
VGT
VQD
I
H(2)
V
D
= V
DRM
R
L
= 3.3kn
Tj = 125°C
I
T
= 100mA
I
G
= 1.2I
GT
I -III
IL
dV/dt (
2
>
II
V
D
= 67 %V
DRM
gate open
Tj = 125°C
(dV/dt)c = 0.1 V/us
Tj = 125°C
V/us
(dl/dt)c
(2)
(dV/dt)c=10V/Ms
Tj = 125°C
Without snubber
Tj=125
0
C
A/ms
1. Minimum I
GT
is guaranted at 5% of |Q
T
max
2. for both polarities of A2 referenced to A1
BTA12, BTB12, T12xx
Characteristics
Table 4.
Electrical characteristics (Tj = 25°C, unless otherwise specified)
standard (4 quadrants)
BTA12/BTB12
Symbol
Test Conditions
Quadrant
C
lGT
( 1
>
Unit
B
V
D
=12V
R
L
= 30fl
I -II -111
IV
ALL
MAX.
MAX.
MIN.
MAX.
25
50
1.3
0.2
25
40
50
100
mA
V
V
VGT
VGD
I
H
<2>
VD = V
DRM
R
L
= 3.3kn Tj = 125°C
I
T
= 500 mA
ALL
50
50
100
400
10
mA
mA
V/MS
V/MS
IL
dV/dt P)
(dV/dt)o <
2
>
!
G
= 1.2I
GT
V
D
= 67% V
DHM
gate open Tj = 125° C
(dl/dt)c = 5.3 A/ms
Tj = 1 25" C
I -III - I V
II
MAX.
80
MIN.
MIN.
200
5
1. Minimum I
GT
is guaranted at 5% of I
G1
- max.
2. for both polarities of A2 referenced to A1.
Table 5.
Symbol
Static characteristics
Test conditions
|
TM
= 17A
t
p
= 380us
Value
MAX.
MAX.
MAX.
MAX.
1
1.55
0.85
35
Unit
V
T
0)
V,o<
1)
Tj = 25° C
T| = 125°C
Tj = 125°C
Tj = 25° C
V
V
mfl
MA
mA
Threshold voltage
Dynamic resistance
VDRM
=
VRRM
R
d(1
>
'DRM
'RRM
Tj=125°C
1. for both polarities of A2 referenced to A1
Table 6.
Symbol
R
th(j-c)
Thermal resistance
Parameter
Junction to case (AC)
Junction to ambient
S(
1
> = 1cm
2
Value
I
2
PAK / D
2
PAK / TO-220AB
TO-220AB insulated
D
2
PAK
1.4
2.3
45
Unit
°C/W
R
th(j^a)
TO-220AB / I
2
PAK
TO-220AB insulated
°c/w
60
1. Copper surface under tab.
Discrete Device
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