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MT4HTF3264HY-800XX

Description
DDR DRAM Module, 32MX64, CMOS, LEAD FREE, MO-224, SODIMM-200
Categorystorage    storage   
File Size340KB,17 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance  
Download Datasheet Parametric View All

MT4HTF3264HY-800XX Overview

DDR DRAM Module, 32MX64, CMOS, LEAD FREE, MO-224, SODIMM-200

MT4HTF3264HY-800XX Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeSODIMM
package instructionLEAD FREE, MO-224, SODIMM-200
Contacts200
Reach Compliance Codecompli
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XZMA-N200
JESD-609 codee4
length67.6 mm
memory density2147483648 bi
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals200
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Package body materialUNSPECIFIED
encapsulated codeDIMM
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height30 mm
self refreshYES
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal locationZIG-ZAG
Maximum time at peak reflow temperature30
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