SG2803J datasheet, PDF - EEWORLD Datasheet

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SG2803J: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon; CategoryDiscrete semiconductor The transistor; File Size642KB，14 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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SG2803J Overview

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon

SG2803J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microchip
package instruction	IN-LINE, R-CDIP-T18
Reach Compliance Code	compli
Other features	LOGIC LEVEL COMPATIBLE
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	50 V
Configuration	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000
JESD-30 code	R-CDIP-T18
JESD-609 code	e0
Number of components	8
Number of terminals	18
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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SG2800

Series

High Voltage Medium Current Driver Arrays

Description

The SG2800 series integrates eight NPN

Darlington pairs with internal suppression diodes to

drive lamps, relays, and solenoids in many military,

aerospace, and industrial applications that require

severe environments.

All units feature open collector outputs with greater

than 50V breakdown voltages combined with

500mA current carrying capabilities.

Five different input configurations provide optimized

designs for interfacing with DTL, TTL, PMOS, or

CMOS drive signals.

These Darlington array are designed to operate

from -55°C to 125°C ambient temperature in a 18-

pin dual in-line ceramic (J) package and 20-pin

leadless chip carrier (LCC).

In addition a plastic version is available in 18 lead

SOWB (DW) package with a reduced temperature

range of 0°C to 70°C.

Features



Eight NPN Darlington Pairs

Collector Currents to 600mA

Output Voltages from 50V to 95V

Internal Clamping Diodes for Inductive

loads

DTL, TTL, PMOS, or CMOS Compatible

inputs

High Reliability Features

Available To MIL-STD-883 – 883, ¶ 1.2.1

Available to DSCC

– Standard Microcircuit Drawing (SMD)



MIL-M38510/14106BVA - SG2801J-JAN



MIL-M38510/14107BVA - SG2802J-JAN



MIL-M38510/14108BVA - SG2803J-JAN



MIL-M38510/14109BVA - SG2804J-JAN



MSC-AMS Level "S" Processing Available



Schematics (each Darlington pair)

SG2801/2811/2821

(Each Driver)

7.2kΩ

kΩ

SG2802/2812

(Each Driver)

kΩ

SG2803/2813/2823

(Each Driver)

2.7

kΩ

7.2kΩ

kΩ

7.2kΩ

kΩ

SG2804/2814/2824

(Each Driver)

10.5

kΩ

SG2805/2815

(Each Driver)

10.5

kΩ

7.2kΩ

kΩ

7.2kΩ

kΩ

Figure 1 ·

Schematics (showing each Darlington pair)

November 2014 Rev. 1.7

www.microsemi.com

SG2803J Related Products

	SG2803J	SG2803J/883B	SG2803J/DESC	SG2803L	SG2803L/883B	SG2803L/DESC
Description	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Microchip	Microchip	Microchip	Microchip	Microchip	Microchip
package instruction	IN-LINE, R-CDIP-T18	IN-LINE, R-CDIP-T18	IN-LINE, R-CDIP-T18	CHIP CARRIER, S-CQCC-N20	CHIP CARRIER, S-CQCC-N20	CHIP CARRIER, S-CQCC-N20
Reach Compliance Code	compli	compli	compli	compli	compli	compli
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	1000	1000	1000	1000	1000	1000
JESD-30 code	R-CDIP-T18	R-CDIP-T18	R-CDIP-T18	S-CQCC-N20	S-CQCC-N20	S-CQCC-N20
JESD-609 code	e0	e0	e0	e0	e0	e0
Number of components	8	8	8	8	8	8
Number of terminals	18	18	18	20	20	20
Maximum operating temperature	150 °C	125 °C	150 °C	125 °C	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE	SQUARE
Package form	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	YES	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL	DUAL	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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