EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

MXLPLAD15KP110AE3TR

Description
Trans Voltage Suppressor Diode, 15000W, 110V V(RWM), Unidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size291KB,4 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

MXLPLAD15KP110AE3TR Overview

Trans Voltage Suppressor Diode, 15000W, 110V V(RWM), Unidirectional, 1 Element, Silicon

MXLPLAD15KP110AE3TR Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instructionR-PSSO-G1
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Maximum breakdown voltage135 V
Minimum breakdown voltage122 V
Breakdown voltage nominal value128.5 V
Shell connectionCATHODE
Maximum clamping voltage177 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage110 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号