IS61DDB42M18A-250B4LI datasheet, PDF

IS61DDB42M18A-250B4LI: DescriptionDDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165; Categorystorage storage; File Size483KB，30 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS61DDB42M18A-250B4LI Overview

DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	BGA
package instruction	LBGA, BGA165,11X15,40
Contacts	165
Reach Compliance Code	compli
ECCN code	3A991.B.2.A
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
length	15 mm
memory density	37748736 bi
Memory IC Type	DDR SRAM
memory width	18
Number of functions	1
Number of terminals	165
word count	2097152 words
character code	2000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
power supply	1.5/1.8,1.8 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum standby current	0.27 A
Minimum standby current	1.7 V
Maximum slew rate	0.5 mA
Maximum supply voltage (Vsup)	1.89 V
Minimum supply voltage (Vsup)	1.71 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
width	13 mm

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