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1N1206RA

Description
Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,
CategoryDiscrete semiconductor    diode   
File Size124KB,1 Pages
ManufacturerInternational Semiconductor Inc
Download Datasheet Parametric View All

1N1206RA Overview

Rectifier Diode, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon, DO-4,

1N1206RA Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionO-MUPM-D1
Reach Compliance Codeunknow
ECCN codeEAR99
applicationPOWER
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-4
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current240 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER

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