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1T224-4M

Description
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon
CategoryDiscrete semiconductor    diode   
File Size65KB,1 Pages
ManufacturerMsi Electronics Inc
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1T224-4M Overview

Variable Capacitance Diode, High Frequency to Ultra High Frequency, 10pF C(T), 12V, Silicon

1T224-4M Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionR-PDSO-L2
Reach Compliance Codeunknow
ECCN codeEAR99
Other features3% MATCHED SET OF FOUR DIODES
Minimum breakdown voltage12 V
ConfigurationSEPARATE, 4 ELEMENTS
Minimum diode capacitance ratio7
Nominal diode capacitance10 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeR-PDSO-L2
Number of components4
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
minimum quality factor200
Maximum reverse current0.01 µA
Reverse test voltage10 V
surface mountYES
Terminal formL BEND
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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