INCH-POUND
MIL-M-38510/112B
18 February 2004
SUPERSEDING
MIL-M-38510/112A
27 January 1986
MILITARY SPECIFICATION
MICROCIRCUITS, LINEAR, VOLTAGE COMPARATORS, MONOLITHIC SILICON
This specification is approved for use by all Departments and Agencies of the Department of Defense.
Reactivated after 18 February 2004 and may be used for either new or existing design acquisition
The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF-38535.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for monolithic silicon, voltage comparators. Two
product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the
complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-
38535, (see 6.3)
1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.
1.2.1 Device types. The device types are as follows:
Device type
01
02
Circuit
Quad voltage comparator, single supply, low power
Dual voltage comparator, single supply, low power
1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.
1.2.3 Case outline. The case outline are as designated in MIL-STD-1835 and as follows:
Outline letter
A 1/
C
D
P
G
2
Descriptive designator
GDFP5-F14 or CDFP6-F14
GDIP1-T14 or CDIP2-T14
GDFP1-F14 or CDFP2-F14
GDIP1-T8 or CDIP2-T8
MACY1-T8
CQCC1-N20
Terminals
14
14
14
8
8
20
Package style
Flat pack
Dual-in-line
Flat pack
Dual-in-line
Can
Square leadless chip carrier
______
1/ Inactive package case outline.
Comments, suggestions, or questions on this document should be addressed to: Commander, Defense
Supply Center Columbus, ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, or email ed
to bipolar@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at www.dodssp.daps.mil.
AMSC N/A
FSC 5962
MIL-M-38510/112B
1.3 Absolute maximum ratings.
Positive supply voltage ..................................................................... 36 V
Total supply voltage .......................................................................... 36 V or
±18
V
Output voltage .................................................................................. 36 V
Input voltage range ........................................................................... -0.3 V to +36 V 2/
Differential input voltage ................................................................... 36 V
Sink current ....................................................................................... 20 mA (approximately)
Output short circuit to ground ............................................................ Continuous 3/
Storage temperature range ............................................................... -65°C to +150°C
Junction temperature (T
J
) ................................................................. +175°C 4/
Lead temperature (soldering, 60 s) .................................................. +300°C.
1.4 Recommended operating conditions.
Supply voltage (V
CC
) ........................................................................ 5 V dc to 30 V dc
Operating temperature range ............................................................ -55°C to +125°C
1.5 Power and thermal characteristics.
Case outline
Package
Maximum allowable
power dissipation
350 mW @ T
A
= 125°C
400 mW @ T
A
= 125°C
330 mW @ T
A
= 125°C
90 mW @ T
A
= 125°C
maximum
θ
J-C
60°C/W
35°C/W
40°C/W
55°C/W
maximum
θ
J-A
140°C/W
120°C/W
150°C/W
121°C/W
A, D
C, P
G
2
14-lead FP
Dual-in-line
8-lead can
20-terminal
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this
specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those
cited in the solicitation or contract.
______
2/ The input voltage should be within the common mode range to insure a proper output state.
3/
4/
No protection exists for short circuits to the positive supply.
For short term test (in the specific burn-in and life test configuration when required and up to 168 hours
maximum) T
J
= 275°C.
2
MIL-M-38510/112B
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883
MIL-STD-1835
- Test Method Standard for Microelectronics.
- Interface Standard Electronic Component Case Outlines.
(Copies of these documents are available online at
http://assist.daps.dla.mil;quicksearch/
or
www.dodssp.daps.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-
5094.)
2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited
herein the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable
laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before
contract award (see 4.3 and 6.4).
3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as
specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the
QM plan shall not affect the form, fit, or function as described herein.
3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as
specified in MIL-PRF-38535 and herein.
3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3.2 Schematic circuits. The schematic circuits shall be maintained by the manufacturer and made available to
the qualifying activity and the preparing activity upon request.
3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3.
3.4 Lead material and finish. The lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).
3.5 Electrical performance characteristics. The electrical performance characteristics are as specified in table I,
and apply over the full recommended case operating temperature range, unless otherwise specified.
3.6 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups
specified in table II. The electrical tests for each subgroup are described in table III.
3.7 Marking. Marking shall be in accordance with MIL-PRF-38535.
3.8 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number
50 (see MIL-PRF-38535, appendix A).
3
MIL-M-38510/112B
TABLE I. Electrical performance characteristics.
Characteristics
Symbol
Conditions
1/
5 V < + V
CC
< 30 V
(see 3.5 and figure 2
unless otherwise indicated)
Input offset voltage
V
IO
∆
V
IO
∆
T
Device
type
Min
All
-5
-7
All
-25
-25
All
-25
-75
All
-400
-300
Limits
Units
Max
5
7
25
25
25
75
400
300
+0.1
+0.1
+0.1
+0.1
dB
µA
nA
nA
pA/°C
nA
µV/°C
mV
T
A
= +25°C
2/
-55°C
≤
T
A
≤
125°C 2/
Input offset voltage
temperature sensitivity
Input offset current
-55°C
≤ ∆T
A
≤
25°C
25°C
≤ ∆T
A
≤
125°C
R
S
= 20 k, 25°C
≤
T
A
≤
125°C 2/
R
S
= 20 k, T
A
= -55°C
Input offset current
temperature sensitivity
Input bias current
∆
V
IO
∆
T
I
IO
2/
-55°C
≤
T
A
≤
25°C
25°C
≤
T
A
≤
125°C
R
S
= 20 k, 25°C
≤
T
A
≤
125°C
R
S
= 20 k, T
A
= -55°C
R
S
= 20 k, 25°C
≤
T
A
≤
125°C
R
S
= 20 k, T
A
= -55°C
+V
CC
= 30 V
+V
CC
= 5 V
+V
CC
= V
O
= +30 V,
25°C
≤
T
A
≤
125°C
+V
CC
= 36 V, V+
I
= 34 V, V-
I
= 0 V
+V
CC
= 36 V, V+
I
= 0 V, V-
I
= 34 V
+V
CC
= 4.5 V, I
O
= 4 mA, T
A
= +25°C
+V
CC
= 4.5 V, I
O
= 8 mA, T
A
= +25°C
+V
CC
= 4.5 V, I
O
= 4 mA,
-55°C
≤
T
A
≤
125°C
+V
CC
= 4.5 V, I
O
= 8 mA,
-55°C
≤
T
A
≤
125°C
2/
2/
2/
2/
3/
3/
+I
IB
-I
IB
All
-100
-200
-100
-200
Input voltage common
mode rejection
Output leakage
CMR
All
75
70
I
CEX
+I
IL
-I
IL
V
OL
All
1.0
Input leakage current
All
-500
-500
500
500
0.4
1.5
0.7
Low level output
voltage
All
V
2.0
See footnotes at end of table.
4
MIL-M-38510/112B
TABLE I. Electrical performance characteristics – Continued.
Characteristics
Symbol
Conditions
1/
5 V < + V
CC
< 30 V
(see 3.5 and figure 2
unless otherwise indicated)
Power supply current
I
CC
V
IO
= 15 mV, +V
CC
= 5 V, T
A
= -55°C
V
IO
= 15 mV, +V
CC
= 5 V, T
A
= 25°C
V
IO
= 15 mV, +V
CC
= 5 V, T
A
= 125°C
V
IO
= 15 mV, +V
CC
= 30 V, T
A
= -55°C
V
IO
= 15 mV, +V
CC
= 30 V, T
A
= 25°C
V
IO
= 15 mV, +V
CC
= 30 V, T
A
= 125°C
Open loop voltage gain
A
VS
+V
CC
= 15 V, R
L
= 15 kΩ,
1 V
≤
V
O
≤
11 V, T
A
= 25°C
+V
CC
= 15 V, R
L
= 15 kΩ,
1 V
≤
V
O
≤
11 V, -55°C
≤
T
A
≤
125°C
Channel separation
Response time
low-to-high level
CS
t
RLH
+V
CC
= 30 V, T
A
= 25°C figure 4
+V
CC
= 5 V, V
IN
= 100 mV,
R
L
= 5.1 kΩ, see figure 3,
V
OD
= 5 mV, -55°C
≤
T
A
≤
25°C
+V
CC
= 5 V, V
IN
= 100 mV,
R
L
= 5.1 kΩ, see figure 3,
V
OD
= 5 mV, T
A
= 125°C
+V
CC
= 5 V, V
IN
= 100 mV,
R
L
= 5.1 kΩ, see figure 3,
V
OD
= 50 mV, -55°C
≤
T
A
≤
25°C
+V
CC
= 5 V, V
IN
= 100 mV,
R
L
= 5.1 kΩ, see figure 3,
V
OD
= 50 mV, T
A
= 125°C
See footnotes at end of table.
Device
Type
Limits
Units
Min
All
Max
3
2
2
4
3
3
mA
All
50
V/mV
All
25
All
All
80
5
dB
µs
7
0.8
1.2
5
京公网安备 11010802033920号
EEWORLD
