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SMAJ7.5AHE3G

Description
Trans Voltage Suppressor Diode, 400W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size191KB,7 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMAJ7.5AHE3G Overview

Trans Voltage Suppressor Diode, 400W, 7.5V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

SMAJ7.5AHE3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage9.21 V
Minimum breakdown voltage8.33 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage7.5 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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