ES3JR6G datasheet, PDF - EEWORLD Datasheet

ES3JR6G: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, GREEN, PLASTIC, SMC, 2 PIN; CategoryDiscrete semiconductor diode; File Size283KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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ES3JR6G Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, GREEN, PLASTIC, SMC, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Taiwan Semiconductor
package instruction	GREEN, PLASTIC, SMC, 2 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.7 V
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.035 µs
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL

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