KMM364E884CS-5 datasheet, PDF - EEWORLD Datasheet

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KMM364E884CS-5: DescriptionEDO DRAM Module, 8MX64, 50ns, CMOS; Categorystorage storage; File Size476KB，22 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KMM364E884CS-5 Overview

EDO DRAM Module, 8MX64, 50ns, CMOS

KMM364E884CS-5 Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
package instruction	DIMM, DIMM168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	536870912 bit
Memory IC Type	EDO DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	8192
Maximum standby current	0.03 A
Maximum slew rate	0.5 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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DRAM MODULE

KMM364E80(8)4CS

Buffered 8Mx64 DIMM

(4Mx16 base)

Revision 0.0

June 1999

KMM364E884CS-5 Related Products

	KMM364E884CS-5	KMM364E804CS-6	KMM364E804CS-5	KMM364E884CS-6
Description	EDO DRAM Module, 8MX64, 50ns, CMOS	EDO DRAM Module, 8MX64, 60ns, CMOS	EDO DRAM Module, 8MX64, 50ns, CMOS	EDO DRAM Module, 8MX64, 60ns, CMOS
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	50 ns	60 ns	50 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE	EDO DRAM MODULE
memory width	64	64	64	64
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	168	168	168	168
word count	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C
organize	8MX64	8MX64	8MX64	8MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	4096	4096	8192
Maximum standby current	0.03 A	0.03 A	0.03 A	0.03 A
Maximum slew rate	0.5 mA	0.54 mA	0.58 mA	0.46 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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