DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, ROHS COMPLIANT, STSOP2-54
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | SAMSUNG |
| Parts packaging code | TSOP2 |
| package instruction | TSSOP, |
| Contacts | 54 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 0.7 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-PDSO-G54 |
| length | 11.2 mm |
| memory density | 536870912 bit |
| Memory IC Type | DDR DRAM |
| memory width | 8 |
| Humidity sensitivity level | 2 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 54 |
| word count | 67108864 words |
| character code | 64000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 64MX8 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TSSOP |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| Peak Reflow Temperature (Celsius) | 260 |
| Certification status | Not Qualified |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | GULL WING |
| Terminal pitch | 0.4 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| width | 10.16 mm |
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