5200mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AB, PLASTIC, MO-153, TSSOP-8
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | TSSOP |
| package instruction | PLASTIC, MO-153, TSSOP-8 |
| Contacts | 8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 20 V |
| Maximum drain current (Abs) (ID) | 7.8 A |
| Maximum drain current (ID) | 5.2 A |
| Maximum drain-source on-resistance | 7800 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | MO-153AB |
| JESD-30 code | R-PDSO-G8 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 3.1 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| PMWD26UN | PMWD26UN,518 | |
|---|---|---|
| Description | 5200mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-153AB, PLASTIC, MO-153, TSSOP-8 | MOSFET 2N-CH 20V 7.8A 8TSSOP |
| Maker | NXP | NXP |
| Parts packaging code | TSSOP | TSSOP |
| package instruction | PLASTIC, MO-153, TSSOP-8 | SMALL OUTLINE, R-PDSO-G8 |
| Contacts | 8 | 8 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 20 V | 20 V |
| Maximum drain current (ID) | 5.2 A | 5.2 A |
| Maximum drain-source on-resistance | 7800 Ω | 7800 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | MO-153AB | MO-153AB |
| JESD-30 code | R-PDSO-G8 | R-PDSO-G8 |
| Number of components | 2 | 2 |
| Number of terminals | 8 | 8 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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