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LE52B33-250

Description
EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32
Categorystorage    storage   
File Size225KB,7 Pages
ManufacturerLSC/CSI
Websitehttps://lsicsi.com
Download Datasheet Parametric View All

LE52B33-250 Overview

EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32

LE52B33-250 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLSC/CSI
package instructionQCCN, LCC32,.45X.55
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time250 ns
Other features10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS
command user interfaceNO
Data pollingNO
Data retention time - minimum10
JESD-30 codeR-CQCC-N32
JESD-609 codee0
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC32,.45X.55
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage5 V
Certification statusNot Qualified
Maximum standby current0.04 A
Maximum slew rate0.11 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO

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