EEPROM, 8KX8, 250ns, Parallel, MOS, CQCC32
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | LSC/CSI |
package instruction | QCCN, LCC32,.45X.55 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum access time | 250 ns |
Other features | 10000 ERASE/PROGRAM CYCLES; DATA RETENTION > 10 YEARS |
command user interface | NO |
Data polling | NO |
Data retention time - minimum | 10 |
JESD-30 code | R-CQCC-N32 |
JESD-609 code | e0 |
memory density | 65536 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 32 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, METAL-SEALED COFIRED |
encapsulated code | QCCN |
Encapsulate equivalent code | LCC32,.45X.55 |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Programming voltage | 5 V |
Certification status | Not Qualified |
Maximum standby current | 0.04 A |
Maximum slew rate | 0.11 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | MOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | NO LEAD |
Terminal pitch | 1.27 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | NOT SPECIFIED |
switch bit | NO |