4.5 A, 18 V, NPN, Si, POWER TRANSISTOR
Parameter Name | Attribute value |
Maximum collector current | 4.5 A |
Maximum Collector-Emitter Voltage | 18 V |
Number of terminals | 4 |
Processing package description | 0.380 INCH, STUD PACKAGE-4 |
state | Active |
Shell connection | EMITTER |
structure | SINGLE |
Minimum DC amplification factor | 10 |
jesd_30_code | O-XRPM-F4 |
Number of components | 1 |
Maximum operating temperature | 200 Cel |
Packaging Materials | UNSPECIFIED |
packaging shape | ROUND |
Package Size | POST/STUD MOUNT |
larity_channel_type | NPN |
wer_dissipation_max__abs_ | 80 W |
qualification_status | COMMERCIAL |
sub_category | Other Transistors |
surface mount | NO |
Terminal form | FLAT |
Terminal location | RADIAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
ASI10741 | VMB10-12F | ASI10735 | HF20-12S | MRF1035MB | |
---|---|---|---|---|---|
Description | 4.5 A, 18 V, NPN, Si, POWER TRANSISTOR | 4.5 A, 18 V, NPN, Si, POWER TRANSISTOR | 4.5 A, 18 V, NPN, Si, POWER TRANSISTOR | 4.5 A, 18 V, NPN, Si, POWER TRANSISTOR | 4.5 A, 18 V, NPN, Si, POWER TRANSISTOR |
Maximum collector current | 4.5 A | 4.5 A | 4.5 A | 4.5 A | 4.5 A |
Maximum Collector-Emitter Voltage | 18 V | 18 V | 18 V | 18 V | 18 V |
Number of terminals | 4 | 4 | 4 | 4 | 4 |
Processing package description | 0.380 INCH, STUD PACKAGE-4 | 0.380 INCH, STUD PACKAGE-4 | 0.380 INCH, STUD PACKAGE-4 | 0.380 INCH, STUD PACKAGE-4 | 0.380 INCH, STUD PACKAGE-4 |
state | Active | Active | Active | Active | Active |
Shell connection | EMITTER | EMITTER | EMITTER | EMITTER | EMITTER |
structure | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC amplification factor | 10 | 10 | 10 | 10 | 10 |
jesd_30_code | O-XRPM-F4 | O-XRPM-F4 | O-XRPM-F4 | O-XRPM-F4 | O-XRPM-F4 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Maximum operating temperature | 200 Cel | 200 Cel | 200 Cel | 200 Cel | 200 Cel |
Packaging Materials | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
packaging shape | ROUND | ROUND | ROUND | ROUND | ROUND |
Package Size | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
larity_channel_type | NPN | NPN | NPN | NPN | NPN |
wer_dissipation_max__abs_ | 80 W | 80 W | 80 W | 80 W | 80 W |
qualification_status | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
sub_category | Other Transistors | Other Transistors | Other Transistors | Other Transistors | Other Transistors |
surface mount | NO | NO | NO | NO | NO |
Terminal form | FLAT | FLAT | FLAT | FLAT | FLAT |
Terminal location | RADIAL | RADIAL | RADIAL | RADIAL | RADIAL |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |