ASI10605 datasheet, PDF - EEWORLD Datasheet

ASI10605: DescriptionHF BAND, Si, NPN, RF POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size17KB，1 Pages; ManufacturerASI [ASI Semiconductor, Inc]

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ASI10605 Overview

HF BAND, Si, NPN, RF POWER TRANSISTOR

Parameter Name	Attribute value
Maximum collector current	5 A
Maximum Collector-Emitter Voltage	35 V
Number of terminals	4
Processing package description	0.380 INCH, STUD PACKAGE-4
state	Active
Shell connection	EMITTER
Maximum Collector Base Capacitance	65 pF
structure	SINGLE
Minimum DC amplification factor	5
highest frequency band	HIGH FREQUENCY BAND
jesd_30_code	O-CRPM-F4
Number of components	1
Maximum operating temperature	200 Cel
Packaging Materials	CERAMIC, METAL-SEALED COFIRED
packaging shape	ROUND
Package Size	POST/STUD MOUNT
larity_channel_type	NPN
wer_dissipation_max__abs_	60 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	ASI10605	MSC80914
Description	HF BAND, Si, NPN, RF POWER TRANSISTOR	HF BAND, Si, NPN, RF POWER TRANSISTOR
Maximum collector current	5 A	5 A
Maximum Collector-Emitter Voltage	35 V	35 V
Number of terminals	4	4
Processing package description	0.380 INCH, STUD PACKAGE-4	0.380 INCH, STUD PACKAGE-4
state	Active	Active
Shell connection	EMITTER	EMITTER
Maximum Collector Base Capacitance	65 pF	65 pF
structure	SINGLE	SINGLE
Minimum DC amplification factor	5	5
highest frequency band	HIGH FREQUENCY BAND	HIGH FREQUENCY BAND
jesd_30_code	O-CRPM-F4	O-CRPM-F4
Number of components	1	1
Maximum operating temperature	200 Cel	200 Cel
Packaging Materials	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
packaging shape	ROUND	ROUND
Package Size	POST/STUD MOUNT	POST/STUD MOUNT
larity_channel_type	NPN	NPN
wer_dissipation_max__abs_	60 W	60 W
qualification_status	COMMERCIAL	COMMERCIAL
sub_category	Other Transistors	Other Transistors
surface mount	NO	NO
Terminal form	FLAT	FLAT
Terminal location	RADIAL	RADIAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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