X24257S8J datasheet, PDF - EEWORLD Datasheet

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X24257S8J: DescriptionEEPROM, 32KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOIC-8; Categorystorage storage; File Size94KB，21 Pages; ManufacturerXicor Inc.

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X24257S8J Overview

EEPROM, 32KX8, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

X24257S8J Parametric

Parameter Name	Attribute value
Maker	Xicor Inc.
package instruction	SOP,
Reach Compliance Code	unknown
Other features	100 YEARS DATA RETENTION, 100000 ENDURANCE CYCLES
Data retention time - minimum	100
Durability	100000 Write/Erase Cycles
JESD-30 code	R-PDSO-G8
length	4.9 mm
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	8
word count	32768 words
character code	32000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	SERIAL
Certification status	Not Qualified
Maximum seat height	1.75 mm
Serial bus type	I2C
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	3.9 mm

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Preliminary

256K

X24257

400KHz 2-Wire Serial E

PROM with Block Lock

™

32K x 8Bit

FEATURES

• Save Critical Data with Programmable Block

Lock Protection

—Block Lock (ﬁrst page, ﬁrst 2 pages, ﬁrst 4

pages, ﬁrst 8 pages, 1/4, 1/2, or all of E

PROM

Array)

—Software Write Protection

—Programmable Hardware Write Protect

• In Circuit Programmable ROM Mode

• 400KHz 2-Wire Serial Interface

—Schmitt Trigger Input Noise Suppression

—Output Slope Control for Ground Bounce

Noise Elimination

• Longer Battery Life With Lower Power

—Active Read Current Less Than 1mA

—Active Write Current Less Than 3mA

—Standby Current Less Than 1

• 1.8V to 3.6V, 2.5V to 5.5V and 4.5V to 5.5V Power

Supply Versions

• 64 Byte Page Write Mode

—Minimizes Total Write Time Per Word

• Internally Organized 32K x 8

• Bidirectional Data Transfer Protocol

• Self-Timed Write Cycle

—Typical Write Cycle Time of 5ms

• High Reliability

—Endurance: 100,000 Cycles

—Data Retention: 100 Years

• 8-Lead XBGA, 8-Lead SOIC, 14-Lead TSSOP

FUNCTIONAL DIAGRAM

DESCRIPTION

The X24257 is a CMOS Serial E

PROM, internally

organized 32K x 8. The device features a serial inter-

face and software protocol allowing operation on a

simple two wire bus.

Three device select inputs (S

–S

) allow up to eight

devices to share a common two wire bus.

A Write Protect Register at the highest address loca-

tion, FFFFh, provides three write protection features:

Software Write Protect, Block Lock Protect, and Pro-

grammable Hardware Write Protect. The Software

Write Protect feature prevents any nonvolatile writes to

the device until the WEL bit in the Write Protect Regis-

ter is set. The Block Lock Protection feature gives the

user eight array block protect options, set by program-

ming three bits in the Write Protect Register. The Pro-

grammable Hardware Write Protect feature allows the

user to install the device with WP tied to V

, write to

and Block Lock the desired portions of the memory

array in circuit, and then enable the In Circuit Program-

mable ROM Mode by programming the WPEN bit

HIGH in the Write Protect Register. After this, the

Block Locked portions of the array, including the Write

Protect Register itself, are protected from being

erased if WP is high.

DATA REGISTER

SERIAL E

PROM DATA

AND ADDRESS (SDA)

SCL

COMMAND

DECODE

AND

CONTROL

LOGIC

BLOCK LOCK AND

WRITE PROTECT

CONTROL LOGIC

WRITE VOLTAGE

CONTROL

PAGE

DECODE

LOGIC

Y DECODE LOGIC

SERIAL E

PROM

ARRAY

32K x 8

WRITE

PROTECT

DEVICE

SELECT

LOGIC

Xicor, Inc. 2000 Patents Pending

9800-5004.1 1/31/00 EP

Characteristics subject to change without notice.

1 of 21

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