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SMT1450

Description
1 ELEMENT, INFRARED LED, 1450nm, ROHS COMPLIANT, SMD, 2 PIN
CategoryLED optoelectronic/LED    photoelectric   
File Size180KB,6 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Environmental Compliance
Download Datasheet Parametric View All

SMT1450 Overview

1 ELEMENT, INFRARED LED, 1450nm, ROHS COMPLIANT, SMD, 2 PIN

SMT1450 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEpitex Inc
package instructionROHS COMPLIANT, SMD, 2 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.1 A
Maximum forward voltage1.3 V
Installation featuresSURFACE MOUNT
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Optoelectronic device typesINFRARED LED
Nominal output power2 mW
peak wavelength1450 nm
Maximum reverse voltage5 V
Semiconductor materialInGaAsP
shapeROUND
Spectral bandwidth1.1e-7 m
surface mountYES
perspective126 deg
epitex
SMT1450
Opto-Device & Custom LED
SMD Type NIR LED SMT1450
Lead ( Pb ) Free Product – RoHS Compliant
High Performance NIR TOP IR LED
SMT1450 consists of an InGaAsP LED mounted on the lead frame as TOP LED package, and is
sealed with epoxy resin. It emits a spectral band of radiation at 1450nm.

Specifications
1) Product Name
TOP NIR LED
2) Type No.
SMT1450
3) Chip
(1) Chip Material
InGaAsP
(2) Peak Wavelength
1450nm typ.
4) Package
(1) Lead Frame Die
Silver Plated
PPA Resin
(2)
Package Resin
Epoxy or Silicone resin
(3)
Lens
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Outer
dimension (Unit: mm)
Maximum Rated Value
130
100
500
5
250
100
-40 ~ +85
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition Minimum
V
F
I
F
=50mA
Forward Voltage
V
FP
I
FP
=500mA
I
F
=50mA
Radiated Power
P
O
I
FP
=500mA
I
F
=50mA
Radiant Intensity
I
E
I
FP
=500mA
Peak Wavelength
P
I
F
=50mA
1400
Half Width

I
F
=50mA
Viewing Half Angle


I
F
=50mA
‡Radiated Power is measured by G8370-85.
‡Radiant Intensity is measured by CIE127-2700 Condition B.
Typical
1.0
2.3
2
8
0.7
2.6
1450
110
±63
Maximum
1.3
Unit
V
mW
mW/sr
1500
nm
nm
deg.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/

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