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TPK15KP30CA

Description
Trans Voltage Suppressor Diode, 30V V(RWM), Bidirectional,
CategoryDiscrete semiconductor    diode   
File Size370KB,6 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
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TPK15KP30CA Overview

Trans Voltage Suppressor Diode, 30V V(RWM), Bidirectional,

TPK15KP30CA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionS-PSSO-G1
Reach Compliance Codecompliant
Maximum breakdown voltage36.8 V
Minimum breakdown voltage33.3 V
Breakdown voltage nominal value35.1 V
Maximum clamping voltage48.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeS-PSSO-G1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
TPK15KPXX
Technical Data
Data Sheet N0174, Rev. D
TPK15KPXX TVS Rectifier
Features
Low profile surface mount
Unidirectional and Bidirectional
Fast response
Suppresses transients up to 15kW @ 10/1000µs
Marking : body marked with TPK15KPXX
This is a Pb − Free Device
Open top for heat dissipation and different connection options
All SMC parts are traceable to the wafer lot
All part are 100% tested: electrical, 1x surge test,
visual inspection
Additional testing can be offered upon request
SPD-4
Schematic & Pin Configuration
Applications
Protection from switching transients and induced RF
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Case
Peak Pulse Power (with 10/1000μs waveform)
(Note 2)
Steady-State Power dissipation
(Note 5)
@T
A
= 25°C
@T
A
= 100°C
Symbol
T
J ,
T
STG
R
θJA
R
θJC
P
PPM
P
D
I
FSM
Value
-55 to +175
50
0.9
15000
2.5 (Note 1)
50 (Note 4)
400.0
Unit
°C
°C/W
°C/W
W
W
A
Peak Forward Surge Current(JEDEC Method)(Note 3)
Note: 1. When mounted on FR4 board with recommended mounting pad(see pad layout).
2. With impulse repetition rate (duty factor) of 0.05% or less.
3. At 8.3ms Single half sine-wave (unidirectional devices only)
4. Case temperature controlled heat sink as specified.
5. See Note 134 for derating when P
PP
also applying steady-state power.
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http://www.smc-diodes.com - sales@ smc-diodes.com

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