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MMBD4148

Description
0.15 A, 75 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size52KB,3 Pages
ManufacturerSHANGHAI SHANGLANG ELECTRONIC TECHNOLOGY CO., LTD.
Download Datasheet Parametric View All

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MMBD4148 Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE

MMBD4148 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3500 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.1500 A
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
MMBD4148

Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
C
Pin Configuration
Top View
350mW 100 Volt
Silicon Epitaxial Diode
KA2
A
A
D
SOT-23
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 357K/W Junction To Ambient
G
F
E
C
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
Average Rectified
Current
Power Dissipation
Junction
Temperature
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
V
RM
I
O
P
TOT
T
J
I
FSM
75V
100V
150mA
350mW
150°C
1A
t=1s,Non-Repetitive
Resistive Load
f > 50Hz
H
J
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
V
F
.855V
I
FM
= 10mA;
T
J
= 25°C*
T
J
= 25°C
V
R
= 20 V
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
I
R
25nA
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
Measured at
1.0MHz, V
R
=0V
T
rr
4nS
I
F
=10mA
V
R
= 6V
R
L
=100Ω
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
C
J
2pF
.037
.950
.037
.950
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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