EEWORLDEEWORLDEEWORLD

Part Number

Search

CY7C1460BV25-250BZXC

Description
ZBT SRAM, 1MX36, 2.6ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Categorystorage    storage   
File Size554KB,29 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
Download Datasheet Parametric View All

CY7C1460BV25-250BZXC Online Shopping

Suppliers Part Number Price MOQ In stock  
CY7C1460BV25-250BZXC - - View Buy Now

CY7C1460BV25-250BZXC Overview

ZBT SRAM, 1MX36, 2.6ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

CY7C1460BV25-250BZXC Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instruction15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time1 week
Maximum access time2.6 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B165
JESD-609 codee1
length17 mm
memory density37748736 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply1.8/2.5,2.5 V
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum standby current0.12 A
Minimum standby current2.38 V
Maximum slew rate0.435 mA
Maximum supply voltage (Vsup)2.625 V
Minimum supply voltage (Vsup)2.375 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width15 mm
CY7C1460BV25
CY7C1462BV25
36-Mbit (1 M × 36/2 M × 18)
Pipelined SRAM with NoBL™ Architecture
36-Mbit (1 M × 36/2 M × 18) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The
CY7C1460BV25/CY7C1462BV25
are
2.5 V,
1 M × 36/2 M × 18 synchronous pipelined burst SRAMs with No
Bus Latency™ (NoBL logic, respectively. They are designed
to support unlimited true back-to-back read/write operations with
no wait states. The CY7C1460BV25/CY7C1462BV25 are
equipped with the advanced NoBL logic required to enable
consecutive read/write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of data in systems that require frequent write/read
transitions.
The
CY7C1460BV25/CY7C1462BV25
are
pin-compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle. Write operations are controlled by the byte write selects
(BW
a
–BW
d
for CY7C1460BV25 and BW
a
–BW
b
for
CY7C1462BV25) and a write enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
For a complete list of related documentation, click
here.
Pin-compatible and functionally equivalent to ZBT™
Supports 250-MHz bus operations with zero wait states
Available speed grades is 250 MHz
Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte Write capability
2.5 V core power supply
2.5 V I/O power supply
Fast clock-to-output times
2.6 ns (for 250-MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self-timed writes
CY7C1460BV25, CY7C1462BV25 available in Pb-free
165-ball FBGA package and CY7C1462BV25 available in
JEDEC-standard Pb-free 100-pin TQFP package
IEEE 1149.1 JTAG-Compatible Boundary Scan
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Logic Block Diagram – CY7C1460BV25
A0, A1, A
MODE
CLK
CEN
ADDRESS
REGISTER 0
A1
A1'
D1
Q1
A0
A0'
BURST
D0
Q0
LOGIC
ADV/LD
C
WRITE ADDRESS
REGISTER 1
WRITE ADDRESS
REGISTER 2
C
ADV/LD
BW
a
BW
b
BW
c
BW
d
WE
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
O
U
T
P
U
T
R
E
G
I
S
T
E
R
S
D
A
T
A
S
T
E
E
R
I
N
G
O
U
T
P
U
T
B
U
F
F
E
R
S
E
DQs
DQP
a
DQP
b
DQP
c
DQP
d
E
INPUT
REGISTER 1
E
INPUT
REGISTER 0
E
OE
CE1
CE2
CE3
ZZ
READ LOGIC
SLEEP
CONTROL
Cypress Semiconductor Corporation
Document Number: 001-74446 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 24, 2015

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号