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EN25Q80A-100WIP

Description
FLASH 2.7V PROM
Categorystorage   
File Size1021KB,50 Pages
ManufacturerEon
Websitehttp://www.essi.com.tw/
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EN25Q80A-100WIP Overview

FLASH 2.7V PROM

EN25Q80A-100WIP Parametric

Parameter NameAttribute value
stateEOL/LIFEBUY
Memory IC typeFLASH 2.7V programmable read-only memory
EN25Q80A
EN25Q80A
8 Megabit Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
Serial Interface Architecture
- SPI Compatible: Mode 0 and Mode 3
8 M-bit Serial Flash
- 8 M-bit/1024 K-byte/4096 pages
- 256 bytes per programmable page
-
-
-
-
-
-
Standard, Dual or Quad SPI
Standard SPI: CLK, CS#, DI, DO, WP#
Dual SPI: CLK, CS#, DQ
0
, DQ
1
, WP#
Quad SPI: CLK, CS#, DQ
0
, DQ
1
, DQ
2
, DQ
3
High performance
100MHz clock rate for one data bit
80MHz clock rate for two data bits
80MHz clock rate for four data bits
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
-
-
-
-
High performance program/erase speed
Page program time: 1.3ms typical
Sector erase time: 90ms typical
Block erase time 500ms typical
Chip erase time: 8 seconds typical
Lockable 256 byte OTP security sector
Minimum 100K endurance cycle
-
-
-
-
-
Package Options
8 pins SOP 150mil body width
8 pins SOP 200mil body width
8 contact VDFN
8 pins PDIP
All Pb-free packages are RoHS compliant
Low power consumption
- 12 mA typical active current
- 1
μA
typical power down current
-
-
-
Uniform Sector Architecture:
256 sectors of 4-Kbyte
16 blocks of 64-Kbyte
Any sector or block can be erased individually
Industrial temperature Range
GENERAL DESCRIPTION
The EN25Q80A is an 8 Megabit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25Q80A supports the standard Serial Peripheral Interface (SPI), and a high
performance Dual output as well as Quad I/O using SPI pins: Serial Clock, Chip Select, Serial DQ
0
(DI),
DQ
1
(DO), DQ
2
(WP#) and DQ
3
(NC). SPI clock frequencies of up to 80MHz are supported allowing
equivalent clock rates of 160MHz for Dual Output and 320MHz for Quad Output when using the
Dual/Quad Output Fast Read instructions. The memory can be programmed 1 to 256 bytes at a time,
using the Page Program instruction.
The EN25Q80A is designed to allow either single
Sector/Block
at a time or full chip erase operation. The
EN25Q80A can be configured to protect part of the memory as the software protected mode. The
device can sustain a minimum of 100K program/erase cycles on each sector
or block
.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
1
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. F, Issue Date: 2011/07/14

EN25Q80A-100WIP Related Products

EN25Q80A-100WIP EN25Q80A_11 EN25Q80A-100GIP EN25Q80A-100HIP
Description FLASH 2.7V PROM FLASH 2.7V PROM FLASH 2.7V PROM FLASH 2.7V PROM
state EOL/LIFEBUY EOL/LIFEBUY EOL/LIFEBUY EOL/LIFEBUY
Memory IC type FLASH 2.7V programmable read-only memory FLASH 2.7V programmable read-only memory FLASH 2.7V programmable read-only memory FLASH 2.7V programmable read-only memory

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