AS7C33512NTD18A datasheet, PDF

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AS7C33512NTD18A: Description3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD; File Size429KB，19 Pages; ManufacturerALSC [Alliance Semiconductor Corporation]

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AS7C33512NTD18A Overview

3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD

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November 2004

AS7C33512NTD18A

3.3V 512K

18 Pipelined burst Synchronous SRAM with NTD

Features

• Organization: 524,288 words × 18 bits

• NTD

™

architecture for efficient bus operation

• Fast clock speeds to 166 MHz

• Fast clock to data access: 3.5/4.0 ns

• Fast OE access time: 3.5/4.0 ns

• Fully synchronous operation

• Common data inputs and data outputs

• Asynchronous output enable control

• Available in100-pin TQFP

• Byte write enables

• Clock enable for operation hold

• Multiple chip enables for easy expansion

• 3.3V core power supply

• 2.5V or 3.3V I/O operation with separate V

DDQ

• Self-timed WRITE cycles

• “Interleaved” or “Linear burst” modes

• Snooze mode for standby operation

Logic block diagram

A[18:0]

Address

Burst logic

CLK

CE0

CE1

CE2

R/W

BWa

BWb

ADV/LD

LBO

CLK

Write delay

addr. registers

CLK

Control

logic

CLK

Write Buffer

512K x 18

SRAM

Array

DQ [a:b]

Data

Input

CLK

CEN

CLK

Output

DQ[a:b]

Selection Guide

-166

Minimum cycle time

Maximum clock frequency

Maximum clock access time

Maximum operating current

Maximum standby current

Maximum CMOS standby current (DC)

11/30/04

;

v.2.1

–133

7.5

133

400

100

Units

MHz

1 of 19

166

3.5

475

130

Alliance Semiconductor

AS7C33512NTD18A Related Products

	AS7C33512NTD18A	AS7C33512NTD18A-133TQC	AS7C33512NTD18A-133TQCN	AS7C33512NTD18A-133TQIN	AS7C33512NTD18A-133TQI	AS7C33512NTD18A-166TQCN	AS7C33512NTD18A-166TQC	AS7C33512NTD18A-166TQIN	AS7C33512NTD18A-166TQI
Description	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD	3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD
Is it Rohs certified?	-	incompatible	conform to	conform to	incompatible	conform to	incompatible	conform to	incompatible
Maker	-	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]	ALSC [Alliance Semiconductor Corporation]
Parts packaging code	-	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
package instruction	-	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87	LQFP, QFP100,.63X.87
Contacts	-	100	100	100	100	100	100	100	100
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	-	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	-	4.5 ns	4.5 ns	4.5 ns	4.5 ns	4 ns	4 ns	4 ns	4 ns
Other features	-	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE	PIPELINED ARCHITECTURE; LATE WRITE
Maximum clock frequency (fCLK)	-	133 MHz	133 MHz	133 MHz	133 MHz	166 MHz	166 MHz	166 MHz	166 MHz
I/O type	-	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	-	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	-	e0	e3	e3	e0	e3	e0	e3	e0
length	-	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm	20 mm
memory density	-	9437184 bi	9437184 bi	9437184 bi	9437184 bi	9437184 bi	9437184 bi	9437184 bi	9437184 bi
Memory IC Type	-	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM	ZBT SRAM
memory width	-	18	18	18	18	18	18	18	18
Number of functions	-	1	1	1	1	1	1	1	1
Number of terminals	-	100	100	100	100	100	100	100	100
word count	-	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	-	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	-	70 °C	70 °C	85 °C	85 °C	70 °C	70 °C	85 °C	85 °C
organize	-	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18	512KX18
Output characteristics	-	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP	LQFP
Encapsulate equivalent code	-	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE
Parallel/Serial	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	245	245	NOT SPECIFIED	245	NOT SPECIFIED	245	NOT SPECIFIED
power supply	-	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
Maximum standby current	-	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
Minimum standby current	-	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V	3.14 V
Maximum slew rate	-	0.4 mA	0.4 mA	0.4 mA	0.4 mA	0.475 mA	0.475 mA	0.475 mA	0.475 mA
Maximum supply voltage (Vsup)	-	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V	3.465 V
Minimum supply voltage (Vsup)	-	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	-	YES	YES	YES	YES	YES	YES	YES	YES
technology	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	-	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	-	Tin/Lead (Sn/Pb)	MATTE TIN	MATTE TIN	Tin/Lead (Sn/Pb)	MATTE TIN	Tin/Lead (Sn/Pb)	MATTE TIN	Tin/Lead (Sn/Pb)
Terminal form	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	-	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm	0.65 mm
Terminal location	-	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	-	NOT SPECIFIED	30	30	NOT SPECIFIED	30	NOT SPECIFIED	30	NOT SPECIFIED
width	-	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm	14 mm

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