NTGS3136P, NVGS3136P
Power MOSFET
−20 V, −5.8 A, Single P−Channel, TSOP−6
Features
•
•
•
•
Low R
DS(on)
in TSOP−6 Package
1.8 V Gate Rating
Fast Switching
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V
(BR)DSS
R
DS(ON)
TYP
25 mW @ −4.5 V
−20 V
32 mW @ −2.5 V
41 mW @ −1.8 V
P−Channel
1 2 5 6
I
D
MAX
−5.1 A
−4.5 A
−2.5 A
•
Optimized for Battery and Load Management Applications in
Portable Equipment
•
High Side Load Switch
•
Switching Circuits for Game Consoles, Camera Phone, etc.
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
v
5s
Power Dissipation
(Note 1)
Steady
State
t
v
5s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
,
T
STG
T
L
I
D
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
P
D
T
A
= 25°C
1.6
−3.7
−2.7
0.7
−20
−55 to
150
260
A
W
A
°C
°C
1
3
Symbol
V
DSS
V
GS
I
D
Value
−20
$8.0
−5.1
−3.6
−5.8
1.25
Unit
V
V
4
MARKING
DIAGRAM
TSOP−6
CASE 318G
STYLE 1
1
XXX
M
G
A
1
W
XXX MG
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0775 in sq).
2
3
Drain Drain Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
February, 2015 − Rev. 2
Publication Order Number:
NTGS3136P/D
NTGS3136P, NVGS3136P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – t = 5 s (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Symbol
R
qJA
R
qJA
R
qJA
Value
100
77
185
°C/W
Unit
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.0775 in sq).
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V, I
D
= −250
mA
ID = −250
mA,
Reference 25°C
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C
T
J
= 85°C
−20
−13
−1.0
−5.0
$0.1
mA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±8.0
V
V
GS
= V
DS
, I
D
= −250
mA
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
−0.4
3
−1.0
V
mV/°C
V
GS
= −4.5 V, I
D
= −5.1 A
V
GS
= −2.5 V, I
D
= −4.5 A
V
GS
= −1.8 V, I
D
= −2.5 A
25
32
41
22
33
40
51
mW
Forward Transconductance
g
FS
V
DS
= −5.0 V, I
D
= −5.1 A
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
V
GS
= 0 V,
I
S
= −1.7 A
T
J
= 25°C
T
J
= 125°C
−0.7
−0.6
37
60
ns
−1.2
V
t
d(ON)
T
r
t
d(OFF)
T
f
V
GS
= −4.5 V, V
DD
= −10 V,
I
D
= −1.0 A, R
G
= 6.0
W
9
9
99
48
19
19
160
79
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
V
GS
= −4.5 V, V
DS
= −10 V;
I
D
= −5.1 A
V
GS
= 0 V, f = 1 MHz, V
DS
= −10 V
1901
274
175
18
0.7
2.4
4.3
7.6
W
29
nC
pF
Reverse Recovery Time
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= −1.7 A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%
6. Switching characteristics are independent of operating junction temperatures
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2
NTGS3136P, NVGS3136P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
20
V
GS
= −4.5 V
−I
D,
DRAIN CURRENT (A)
16
−2 V
−1.8 V
T
J
= 25°C
−I
D,
DRAIN CURRENT (A)
15
20
V
DS
= −5 V
12
−2.5 V
−1.5 V
10
T
J
= 25°C
5
T
J
= 125°C
0
T
J
= −55°C
8.0
4.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.5
0.75
1
1.25
1.5
1.75
2
2.25 2.5
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.14
I
D
= −5.1 A
0.12
0.10
0.08
0.06
0.04
0.02
0
1.0
T
J
= 125°C
T
J
= 25°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Figure 2. Transfer Characteristics
T
J
= 25°C
−1.8 V
−2 V
−2.5 V
V
GS
= −4.5 V
4.0
8.0
12
16
20
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
−I
D,
DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.5
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
I
D
= −4.5 A
V
GS
= −5.1 V
C, CAPACITANCE (pF)
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
C
iss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
oss
C
rss
0
2
4
6
8
10
12
T
J
, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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3
NTGS3136P, NVGS3136P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
5
Q
T
4
−V
DS
10
8
3
−V
GS
6
2 Q
GS
Q
GD
4
1
V
DS
= −10 V
I
D
= −5.1 A
T
J
= 25°C
0
2
4
6
8
10
12
14
16
2
0
18
12
30
V
GS
= 0 V
−I
S
, SOURCE CURRENT (A)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
10
T
J
= 150°C
T
J
= 25°C
0
Q
G
, TOTAL GATE CHARGE (nC)
1.0
0
0.2
0.4
0.6
0.8
1.0
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.2
Figure 7. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 8. Diode Forward Voltage vs. Current
0.8
I
D
= −250
mA
0.7
0.6
−V
GS(th)
(V)
0.5
0.4
0.3
0.2
−50
80
70
60
POWER (W)
−25
0
25
50
75
100
125
150
50
40
30
20
10
0
1E−3
1E−2
1E−1
1
1E+1
1E+2
1E+3
T
J
, JUNCTION TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
R
(t)
, EFFECTIVE TRANSIENT THERMAL
RESPONSE (NORMALIZED)
1
100
−I
D
, DRAIN CURRENT (A)
10
100
ms
1 ms
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
1E−04 1E−03 1E−02 1E−01
1
10 ms
V
GS
= −8.0 V
SINGLE PULSE
0.1 T
C
= 25°C
R
DS(on)
LIMIT
Thermal Limit
Package Limit
0.01
0.1
1
dc
10
100
1
1E+01 1E+02 1E+03
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, TIME (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
Figure 12. FET Thermal Response
NTGS3136P, NVGS3136P
ORDERING INFORMATION
Device
NTGS3136PT1G
NVGS3136PT1G*
Marking
SD
VSD
Package
TSOP−6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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5
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