AS7C33256PFD36A-166TQIN datasheet, PDF

AS7C33256PFD36A-166TQIN: Description3.3V 256K x 32/36 pipelined burst synchronous SRAM; Categorystorage storage; File Size509KB，20 Pages; ManufacturerALSC [Alliance Semiconductor Corporation]; Environmental Compliance

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AS7C33256PFD36A-166TQIN Overview

3.3V 256K x 32/36 pipelined burst synchronous SRAM

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ALSC [Alliance Semiconductor Corporation]
Parts packaging code	QFP
package instruction	LQFP, QFP100,.63X.87
Contacts	100
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	3.5 ns
Other features	FLOW-THROUGH OR PIPELINED ARCHITECTURE
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e3
length	20 mm
memory density	9437184 bi
Memory IC Type	STANDARD SRAM
memory width	36
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	256KX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	245
power supply	2.5/3.3,3.3 V
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum standby current	0.03 A
Minimum standby current	3.14 V
Maximum slew rate	0.475 mA
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	14 mm

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