HYMD512M646BLFP8-J datasheet, PDF

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HYMD512M646BLFP8-J: Description200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA); Categorystorage storage; File Size409KB，17 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/; Environmental Compliance

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HYMD512M646BLFP8-J Overview

200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)

HYMD512M646BLFP8-J Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SK Hynix
Parts packaging code	MODULE
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N200
JESD-609 code	e1
memory density	8589934592 bi
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	2.5 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.16 A
Maximum slew rate	3.96 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	2.5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	20

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Description	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)	200pin Unbuffered DDR SDRAM SO-DIMMs based on 512Mb B ver. (FBGA)
Is it Rohs certified?	conform to	incompatible	incompatible	incompatible	conform to	incompatible	incompatible	conform to	conform to
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE	MODULE
package instruction	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Contacts	200	200	200	200	200	200	200	200	200
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	0.7 ns	0.7 ns	0.75 ns	0.7 ns	0.7 ns	0.7 ns	0.75 ns	0.7 ns	0.75 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	166 MHz	200 MHz	133 MHz	166 MHz	200 MHz	200 MHz	133 MHz	200 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200	R-XDMA-N200
memory density	8589934592 bi	8589934592 bi	8589934592 bi	8589934592 bi	8589934592 bi	8589934592 bi	8589934592 bi	8589934592 bi	8589934592 bi
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64	64	64	64
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	200	200	200	200	200	200	200	200	200
word count	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words	134217728 words
character code	128000000	128000000	128000000	128000000	128000000	128000000	128000000	128000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128MX64	128MX64	128MX64	128MX64	128MX64	128MX64	128MX64	128MX64	128MX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V	2.6 V	2.5 V	2.6 V	2.5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Maximum standby current	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A	0.16 A
Maximum slew rate	3.96 mA	4.6 mA	3.32 mA	3.96 mA	4.6 mA	4.6 mA	3.32 mA	4.6 mA	3.32 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Minimum supply voltage (Vsup)	2.3 V	2.5 V	2.3 V	2.3 V	2.5 V	2.5 V	2.3 V	2.5 V	2.3 V
Nominal supply voltage (Vsup)	2.5 V	2.6 V	2.5 V	2.5 V	2.6 V	2.6 V	2.5 V	2.6 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm	0.6 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Peak Reflow Temperature (Celsius)	260	225	225	225	NOT SPECIFIED	-	225	260	260
Maximum time at peak reflow temperature	20	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	20	20

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