3N80G-TMS4-R datasheet, PDF - EEWORLD Datasheet

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3N80G-TMS4-R: DescriptionPower Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S4, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size265KB，8 Pages; ManufacturerUNISONIC TECHNOLOGIES CO.,LTD; Websitehttp://www.unisonic.com.tw/

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3N80G-TMS4-R Overview

Power Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S4, 3 PIN

3N80G-TMS4-R Parametric

Parameter Name	Attribute value
Maker	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	TO-251S4, 3 PIN
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	170 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	4.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	10 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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UNISONIC TECHNOLOGIES CO., LTD

3N80

3.0 Amps, 800Volts

N-CHANNEL POWER MOSFET



DESCRIPTION

Power MOSFET

The UTC

3N80

provide excellent R

DS(ON)

, low gate charge and

operation with low gate voltages. This device is suitable for use as a

load switch or in PWM applications.



FEATURES

* R

DS(ON)

< 4.2Ω @V

= 10 V

* Ultra Low Gate Charge ( typical 19 nC )

* Low Reverse Transfer Capacitance ( C

RSS

= Typical 11 pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness



SYMBOL



ORDERING INFORMATION

Package

TO-220

TO-220F

TO-220F1

TO-220F2

TO-251

TO-251S4

TO-252

Pin Assignment

Packing

Tube

Tape Reel

Ordering Number

Lead Free

Halogen Free

3N80L-TA3-T

3N80G-TA3-T

3N80L-TF3-T

3N80G-TF3-T

3N80L-TF1-T

3N80G-TF1-T

3N80L-TF2-T

3N80G-TF2-T

3N80L-TM3-T

3N80G-TM3-T

3N80L-TMS4-R

3N80G-TMS4-R

3N80L-TN3-R

3N80G-TN3-R

Note: Pin Assignment: G: Gate

D: Drain

S: Source

www.unisonic.com.tw

1 of 8

QW-R502-283.J

3N80G-TMS4-R Related Products

	3N80G-TMS4-R	3N80L-TMS4-R
Description	Power Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S4, 3 PIN	Power Field-Effect Transistor, 3A I(D), 800V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, TO-251S4, 3 PIN
Maker	UNISONIC TECHNOLOGIES CO.,LTD	UNISONIC TECHNOLOGIES CO.,LTD
package instruction	TO-251S4, 3 PIN	TO-251S4, 3 PIN
Reach Compliance Code	compliant	compliant
Avalanche Energy Efficiency Rating (Eas)	170 mJ	170 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	800 V	800 V
Maximum drain current (ID)	3 A	3 A
Maximum drain-source on-resistance	4.2 Ω	4.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251	TO-251
JESD-30 code	R-PSIP-T3	R-PSIP-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	10 A	10 A
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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