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2SB1412L-P-TN3-T

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size190KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric View All

2SB1412L-P-TN3-T Overview

Small Signal Bipolar Transistor

2SB1412L-P-TN3-T Parametric

Parameter NameAttribute value
MakerUNISONIC TECHNOLOGIES CO.,LTD
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codecompliant
Maximum collector current (IC)5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
UNISONIC TECHNOLOGIES CO., LTD
2SB1412
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
PNP SILICON TRANSISTOR
The UTC
2SB1412
is an epitaxial planar type PNP silicon
transistor.
FEATURES
* Excellent DC current gain characteristics
* Low V
CE(SAT)
V
CE(SAT)
= -0.35V (Typ)
(I
C
/I
B
= -4A/-0.1A)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SB1412L-x-TN3-T
2SB1412G-x-TN3-T
2SB1412L-x-TN3-R
2SB1412G-x-TN3-R
Package
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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