T1635H-6I, T1635H-6T, T1635H-6G
T1650H-6I, T1650H-6T, T1650H-6G
Datasheet
16 A - 600 V H-series Snubberless Triac
A2
Features
•
•
Medium current Triac
150 °C max. T
j
turn-off commutation
Low thermal resistance with clip bonding
Very high 3 quadrant commutation capabilities
Packages are RoHS (2002/95/EC) compliant
UL certified (ref. file E81734)
G
A1
A2
•
•
•
•
A1
A2
G
A2
A1
G
TO-220AB
A2
TO-220AB Ins.
Application
The 600 V T1635H and T1650H are especially designed to operate in high power
density or universal motor applications such as vacuum cleaner, coffee brewers, and
inrush current limiter for inverter based home appliances.
D²PAK
A2
A1
G
Description
Available in through-hole or surface mount packages, these Triac series are suitable
for general purpose mains power ac switching.
These 20 A Triacs provide a very high switching capability up to junction
temperatures of 150 °C.
The heatsink can be reduced, compared to traditional Triacs, according to the high
performance at given junction temperatures.
Product status link
T1635H-6I, T1635H-6T, T1635H-6G,
T1650H-6I, T1650H-6T, T1650H-6G
Product summary
I
T(RMS)
V
DRM
/V
RRM
I
GT
16 A
600 V
35 or 50 mA
By using an internal ceramic pad, the TO-220AB insulated version provide voltage
insulation (rated at 2500 V
RMS
).
The surface mount D²PAK package enables compact SMD based designs for
automated manufacturing.
DS5310
-
Rev 4
-
March 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (limiting values)
Symbol
Parameter
D
2
PAK,
TO-220AB
TO-220AB Ins.
I
TSM
I
2
t
dl/dt
V
DSM
/
V
RSM
I
GM
P
G(AV)
T
stg
T
j
Non repetitive surge peak on-state current (full cycle,
T
j
initial = 25 °C)
I
2
t value for fusing
Critical rate of rise of on-state current, I
G
= 2 x I
GT
, tr
≤ 100 ns, f = 100 Hz
Non Repetitive peak off-state voltage
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
f = 120 Hz
t
p
= 10 ms
t
p
= 20 µs
f = 50 Hz
f = 60 Hz
T
c
= 130 °C
T
c
= 113 °C
t = 20 ms
t = 16.7 ms
t
p
= 10 ms
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
160
168
169
100
V
DRM
/V
RRM
+100
4
1
-40 to +150
-40 to +150
A
A
2
s
A/µs
V
A
W
°C
°C
Value
Unit
I
T(RMS)
RMS on-state current (full sine wave)
16
A
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
I
GT
(1)
V
GT
V
GD
I
L
I
H
(2)
dV/dt
(2)
Test conditions
Quadrants
Max.
Max.
I - II - III
I - III
II
Min.
Max.
Max.
Max.
T
j
= 150 °C
T
j
= 150 °C
Min.
Min.
50
80
35
1000
21
Value
T1635H
35
1.0
0.15
90
110
75
1500
28
T1650H
50
Unit
mA
V
V
mA
mA
V/µs
A/ms
V
D
= 12 V, R
L
= 33 Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
G
= 1.2 x I
GT
I
T
= 500 mA, gate open
V
D
= 2/3 x V
DRM
, gate open
I - II - III
(dl/dt)c
(2)
Without snubber
1. Minimum I
GT
is guaranteed at 20% of I
GT
max.
2. For both polarities of A2 referenced to A1.
DS5310
-
Rev 4
page 2/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics
Table 3.
Static characteristics
Symbol
V
T
(1)
V
TO
(1)
R
D
(1)
I
TM
= 23 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
I
DRM
/
I
RRM
(2)
V
D
= V
R
= 400 V, peak voltage
V
D
= V
R
= 200 V, peak voltage
1. For both polarities of A2 referenced to A1.
2. t
p
= 380 μs
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150°C
T
j
= 150 °C
T
j
= 150 °C
Max.
Max.
Max.
Max.
Max.
Max.
Value
1.5
0.80
23
5
4.1
3.5
3.0
Unit
V
V
mΩ
µA
mA
mA
Table 4.
Thermal resistance
Symbol
Parameter
D
2
PAK,
TO-220AB
TO-220AB Ins.
R
th(j-a)
Junction to ambient (S
cu
= 2 cm
2
)
Junction to ambient
D
2
PAK,
TO-220AB
TO-220AB Ins.
Value
1.15
2.1
45
60
Unit
R
th(j-c)
Junction to case (AC)
°C/W
°C/W
DS5310
-
Rev 4
page 3/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus on-state
RMS current
P(W)
=180 °
Figure 2.
On-state RMS current versus case temperature
I
T(RMS)
(A)
D²PAK
TO-220AB
TO220AB ins
18
16
14
12
10
8
6
4
2
0
18
16
14
12
10
8
6
4
180°
2
0
T
C
(°C)
0
25
50
75
100
125
150
I
T(RMS)
(A)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Figure 3.
On-state RMS current versus ambient
temperature
I
T(RMS)
(A)
4.0
3.5
3.0
2.5
TO220AB ins
Figure 4.
Variation of thermal impedance versus pulse
duration
K=[Z
th
/R
th
]
1.0E+00
Epoxy printed circuit board FR4,
copper thickness = 35 µm
= 180°
D²PAK
S
CU
= 2 cm²
Z
th(j-c)
Z
th(j-a)
2.0
1.5
1.0
0.5
0.0
0
TO-220AB
1.0E-01
T
amb
(°C)
25
50
75
100
125
150
1.0E-02
1.0E-03
1.0E-02
1.0E-01
t
P
(s)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
DS5310
-
Rev 4
page 4/13
T1635H-6I, T1635H-6T, T1635H-6G, T1650H-6I, T1650H-6T, T1650H-6G
Characteristics (curves)
Figure 5.
On-state characteristics (maximum values)
1000
Figure 6.
Surge peak on-state current versus number of
cycles
I
TSM
(A)
I
TM
(A)
180
160
140
100
T
j
=150 °C
Non repetitive
T
j
initial = 25 °C
t=20ms
120
100
T
j
=25 °C
One cycle
80
60
T
j
max. :
V
t0
= 0.80 V
R
d
= 23 m
Ω
10
Repetitive
T
c
=110 °C
40
20
4.5
1
0.0
0.5
1.0
1.5
V
TM
(V)
2.0
2.5
3.0
3.5
4.0
0
1
10
Number of cycles
100
1000
Figure 7.
Non repetitive surge peak on-state current for a
sinusoidal pulse with width t
p
< 10 ms
10000
Figure 8.
Relative variation of I
GT
,I
H
, I
L
vs junction
temperature (typical values)
I
GT
, I
H
, I
L
[T
j
] / I
GT
, I
H
, I
L
[T
j
= 25 °C]
I
TSM
(A)
dl/dt limitation: 100 A/µs
Tj initial = 25 °C
2.5
2.0
I
GT
1000
1.5
I
TSM
1.0
I
H
& I
L
100
0.5
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
160
10
0.01
tp(ms)
0.10
1.00
10.00
Figure 9.
Relative variation of critical rate of decrease of
main current (dI/dt)c versus reapplied (dV/dt)c
(dI/dt)
c
[ (dV/dt)
c
] / specified (dI/dt)
c
typical values
Figure 10.
Relative variation of critical rate of decrease of
main current versus junction temperature
(dI/dt )
c
[T
j
] / (dI/dt)
c
[T
j
= 150°C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
8
7
6
5
4
3
2
1
(dV/dt)
C
(V/µs)
0.1
1.0
10.0
100.0
T
j
(°C)
0
25
50
75
100
125
150
DS5310
-
Rev 4
page 5/13
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