TXM19500/469-05 datasheet, PDF

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TXM19500/469-05: DescriptionBridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4; CategoryDiscrete semiconductor diode; File Size168KB，2 Pages; ManufacturerSENSITRON; Websitehttp://www.sensitron.com/

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TXM19500/469-05 Overview

Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4

TXM19500/469-05 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SENSITRON
package instruction	S-MUFM-X4
Contacts	4
Reach Compliance Code	compliant
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V
JESD-30 code	S-MUFM-X4
JESD-609 code	e0
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	100 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	10 A
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Certification status	Not Qualified
Guideline	MIL-19500/469
Maximum repetitive peak reverse voltage	1000 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	UNSPECIFIED
Terminal location	UPPER

TXM19500/469-05 Related Products

	TXM19500/469-05	TXM19500/469-02	TXM19500/469-03	TXM19500/469-01	TXM19500/469-04
Description	Bridge Rectifier Diode, 1 Phase, 10A, 1000V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4	Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon, HERMETIC SEALED, METAL PACKAGE-4
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SENSITRON	SENSITRON	SENSITRON	SENSITRON	SENSITRON
package instruction	S-MUFM-X4	S-MUFM-X4	S-MUFM-X4	S-MUFM-X4	S-MUFM-X4
Contacts	4	4	4	4	4
Reach Compliance Code	compliant	compliant	compliant	unknown	compliant
Other features	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1.4 V	1.4 V	1.4 V	1.4 V	1.4 V
JESD-30 code	S-MUFM-X4	S-MUFM-X4	S-MUFM-X4	S-MUFM-X4	S-MUFM-X4
JESD-609 code	e0	e0	e0	e0	e0
Humidity sensitivity level	1	1	1	1	1
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A
Number of components	4	4	4	4	4
Phase	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A
Package body material	METAL	METAL	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Guideline	MIL-19500/469	MIL-19500/469	MIL-19500/469	MIL-19500/469	MIL-19500/469
Maximum repetitive peak reverse voltage	1000 V	400 V	600 V	200 V	800 V
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
Base Number Matches	-	1	1	1	-

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