ZBT SRAM, 512KX36, 2.6ns, CMOS, PQFP100
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | SAMSUNG |
package instruction | QFP, QFP100,.63X.87 |
Reach Compliance Code | unknown |
Maximum access time | 2.6 ns |
Maximum clock frequency (fCLK) | 250 MHz |
I/O type | COMMON |
JESD-30 code | R-PQFP-G100 |
JESD-609 code | e3 |
memory density | 18874368 bit |
Memory IC Type | ZBT SRAM |
memory width | 36 |
Humidity sensitivity level | 1 |
Number of terminals | 100 |
word count | 524288 words |
character code | 512000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 512KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | QFP |
Encapsulate equivalent code | QFP100,.63X.87 |
Package shape | RECTANGULAR |
Package form | FLATPACK |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 2.5,3.3 V |
Certification status | Not Qualified |
Maximum standby current | 0.13 A |
Minimum standby current | 3.14 V |
Maximum slew rate | 0.36 mA |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | MATTE TIN |
Terminal form | GULL WING |
Terminal pitch | 0.635 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | NOT SPECIFIED |