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K7N163631B-PC25T

Description
ZBT SRAM, 512KX36, 2.6ns, CMOS, PQFP100
Categorystorage    storage   
File Size560KB,25 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance  
Download Datasheet Parametric View All

K7N163631B-PC25T Overview

ZBT SRAM, 512KX36, 2.6ns, CMOS, PQFP100

K7N163631B-PC25T Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSAMSUNG
package instructionQFP, QFP100,.63X.87
Reach Compliance Codeunknown
Maximum access time2.6 ns
Maximum clock frequency (fCLK)250 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
JESD-609 codee3
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5,3.3 V
Certification statusNot Qualified
Maximum standby current0.13 A
Minimum standby current3.14 V
Maximum slew rate0.36 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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