NX8566LE421-CC datasheet, PDF - EEWORLD Datasheet

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NX8566LE421-CC: DescriptionLASER DIODE W/MONITOR,1.542UM PEAK WAVELENGTH,MODULE-BF; CategoryLED optoelectronic/LED photoelectric; File Size156KB，14 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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NX8566LE421-CC Overview

LASER DIODE W/MONITOR,1.542UM PEAK WAVELENGTH,MODULE-BF

NX8566LE421-CC Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Reach Compliance Code	unknown
Maximum forward current	0.15 A
Maximum forward voltage	2 V
Maximum operating temperature	70 °C
Minimum operating temperature	-20 °C
Optoelectronic device types	LASER DIODE
peak wavelength	1542 nm
Maximum response time	1.25e-10 s

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DATA SHEET

LASER DIODE

NX8564/8565/8566LE Series

EA MODULATOR INTEGRATED

1 550 nm MQW-DFB LASER DIODE MODULE FOR

2.5 Gb/s DWDM ULTRALONG-REACH 360 km, 600 km, 240 km APPLICATIONS

DESCRIPTION

The NX8564/8565/8566LE Series is an Electro-Absorption (EA) modulator

integrated, 1 550 nm Multiple Quantum Well (MQW) structured Distributed

Feed-Back (DFB) laser diode. The module is capable of 2.5 Gb/s applications

of over 360 km, 600 km, 240 km ultralong-reach and available for Dense

Wavelength Division Multiplexing (DWDM) wavelengths based on ITU-T

recommendations, enabling a wide range of applications.

FEATURES

• Integrated electroabsorption modulator

• Very low dispersion penalty

(over 360 km (6480 ps/nm), NX8564LE-BC/CC)

(over 600 km (10800 ps/nm), NX8565LE-BC/CC)

(over 240 km (4320 ps/nm), NX8566LE-BC/CC)

• Low modulation voltage

• Available for DWDM wavelengths based on ITU-T recommendations

(100 GHz grid, refer to

ORDERING INFORMATION)

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PL10186EJ03V0DS (3rd edition)

Date Published January 2004 CP(K)

Printed in Japan

The mark

shows major revised points.



NEC Compound Semiconductor Devices 2000, 2004

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