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VSF05A20

Description
Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-277,
CategoryDiscrete semiconductor    diode   
File Size1MB,6 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

VSF05A20 Overview

Rectifier Diode, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, TO-277,

VSF05A20 Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
package instructionR-PDSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JEDEC-95 codeTO-277
JESD-30 codeR-PDSO-F3
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage200 V
Maximum reverse current10 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Fast Recovery Diode
VSF05A20
TO-277
■特⻑ / Features
⾼速trr
Fast recovery time
½IR
Low leakage current
½フトリカバリー
Soft recovery
RoHS指令対応
RoHS compliant
エポキシ樹脂 (UL94V-0 認定品)
Epoxy Resin (UL94V-0 recognized)
■アプリケーション / Applications
DC/DCコンバータ
DC/DC converters
AC/DC電源
AC/DC power supplies
■最⼤定格 / Maximum ratings
Parameter
くり返しピーク逆電圧
Repetitive Peak Reverse Voltage
平均整流電流
Average Rectified Output Current
サージ順電流
Surge Forward Current
動½接合温度範囲
Operating Junction Temperature Range
保存温度範囲
Storage Temperature Range
Symbol
V
RRM
I
O
I
FSM
T
jw
T
stg
Tl=125℃
50Hz 正弦半波、1サイクル、⾮くり返し
Half Sine Wave, 1cycle, Non-repetitive
Conditions
Limits
200
5.0
80
-55 〜 +175
-55 〜 +175
Unit
V
A
A
■電気的特性 / Electrical characteristics
Parameter
ピーク逆電流
Peak Reverse Current
ピーク順電圧
Peak Forward Voltage
逆回復時間
Reverse recovery time
熱抵抗
Thermal Resistance
Symbol
I
RM
V
FM
t
rr
R
th
V
RM
=V
RRM
T
j
=25℃
I
FM
=5A T
J
=25℃ per diode
I
FM
=5A T
J
=25℃ -di/dt=50A/μs
接合部ーリード間
Junction to Lead
Conditions
Min.
-
-
-
-
Typ.
-
-
-
-
Max. Unit
0.01
0.98
35
9.0
mA
V
ns
℃/W
www.niec.co.jp
March 2016 v01
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