Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Littelfuse |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | not_compliant |
| Other features | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 700 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1000 V |
| Maximum drain current (Abs) (ID) | 6 A |
| Maximum drain current (ID) | 6 A |
| Maximum drain-source on-resistance | 2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-268 |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 180 W |
| Maximum pulsed drain current (IDM) | 24 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IXFT6N100Q | IXFH6N100Q | |
|---|---|---|
| Description | Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268, TO-268, 3 PIN | Power Field-Effect Transistor, 6A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN |
| Is it Rohs certified? | conform to | conform to |
| Maker | Littelfuse | Littelfuse |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | not_compliant | compliant |
| Other features | AVALANCHE RATED | AVALANCHE RATED |
| Avalanche Energy Efficiency Rating (Eas) | 700 mJ | 700 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1000 V | 1000 V |
| Maximum drain current (Abs) (ID) | 6 A | 6 A |
| Maximum drain current (ID) | 6 A | 6 A |
| Maximum drain-source on-resistance | 2 Ω | 2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-268 | TO-247 |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 |
| JESD-609 code | e3 | e1 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 180 W | 180 W |
| Maximum pulsed drain current (IDM) | 24 A | 24 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | NO |
| Terminal surface | Matte Tin (Sn) | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | GULL WING | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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