P4C1681, P4C1682
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25 ns (Commercial)
– 20/25/35ns (Military)
Low Power Operation
Single 5V ± 10%Power Supply
Separate Inputs and Outputs
– P4C1681 Input Data at Outputs during Write
– P4C1682 Outputs in High Z during Write
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 24-Pin 300 mil DIP
– 24-Pin 300 mil SOIC
– 24-Pin 300 mil SOJ
– 24-Pin Solder Seal Flat Pack
– 28-Pin LCC (450 mil x 450 mil)
DESCRIPTION
The P4C1681 and P4C1682 are 16,384-bit (4K x 4) ultra
high speed static RAMs similar to the P4C168, but with
separate data I/O pins. The P4C1681 features a
transparent write operation; the outputs of the P4C1682
are in high impedance during the write cycle. All devices
have low power standby modes. The RAMs operate
from a single 5V ± 10% tolerance power supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
.
CMOS is used to reduce power consumption.
The P4C1681 and P4C1682 are available in 24-pin 300 mil
DIP, SOIC, Solder Seal Flatpack, and SOJ packages, as
well as a 28-pin LCC package, providing excellent board
level densities.
FUNCTIONAL BLOCK DIAGRAM
PIN CONFIGURATIONS
DIP (P4,C4), SOIC (S4), SOJ (J4)
SOLDER SEAL FLAT PACK (FS-1)
LCC (L5-1)
Document #
SRAM109
REV A
1
Revised October 2005
P4C1681, P4C1682
MAXIMUM RATINGS
1
Symbol
V
CC
Parameter
Power Supply Pin with
Respect to GND
Terminal Voltage with
Respect to GND
(up to 7.0V)
Operating Temperature
Value
–0.5 to +7
–0.5 to
V
CC
+0.5
–55 to +125
Unit
V
Symbol
T
BIAS
T
STG
P
T
I
OUT
Parameter
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
Value
–55 to +125
–65 to +150
1.0
50
Unit
°C
°C
W
mA
V
TERM
T
A
V
°C
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Military
Ambient
Temperature
GND
0V
0V
V
CC
5.0V ± 10%
5.0V ± 10%
CAPACITANCES
(4)
V
CC
= 5.0V, T
A
= 25°C, f = 1.0MHz
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Conditions Typ. Unit
V
IN
= 0V
5
7
pF
pF
–55°C to +125°C
0°C to +70°C
Commercial
Output Capacitance V
OUT
= 0V
DC ELECTRICAL CHARACTERISTICS
Over Recommended operating temperature and supply voltages(2)
Sym.
Parameter
Input High Voltage
Input Low Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
Output Low Voltage
(TTL Load)
Output Low Voltage
(CMOS Load)
Output High Voltage
(TTL Load)
Output High Voltage
(CMOS Load)
Input Leakage Current
Output Leakage Current
Test Conditions
P4C1681
P4C1682
Min
Max
2.2
–0.5
(3)
–0.5
(3)
V
CC
+0.5
0.8
0.2
–1.2
0.4
0.2
2.4
V
CC
–0.2
–10
–5
–10
–5
+10
+5
+10
+5
Unit
V
V
V
V
V
V
V
V
V
µA
µA
µA
µA
V
IH
V
IL
V
HC
V
LC
V
CD
V
OL
V
OLC
V
OH
V
OHC
I
LI
I
LO
V
CC
–0.2 V
CC
+0.5
V
CC
= Min., I
IN
= –18 mA
I
OL
= +8 mA, V
CC
= Min.
I
OLC
= +100 µA, V
CC
= Min.
I
OH
= –4 mA, V
CC
= Min.
I
OHC
= –100 µA, V
CC
= Min.
V
CC
= Max.
V
IN
= GND to V
CC
V
CC
= Max.
CE
= V
IH
V
OUT
= GND to V
CC
Mil.
Comm'l
Mil.
Comm'l
Notes:
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with V
IL
and I
IL
not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20 ns.
4. This parameter is sampled and not 100% tested.
Document #
SRAM109
REV A
Page 2 of 10
P4C1681, P4C1682
POWER DISSIPATION CHARACTERISTICS
Over recommended operating temperature and supply voltage
(2)
P4C1681
P4C1682
Min
—
—
—
—
Max
130
130
100
35
Symbol
I
CC
I
CC
I
SB
Parameter
Dynamic Operating
Current – 12, 15
Dynamic Operating
Current – 20, 25, 35
Standby Power Supply
Current (TTL Input Levels)
Standby Power Supply
Current
(CMOS Input Levels)
Test Conditions
V
CC
= Max., f = Max.,
Outputs Open
V
CC
= Max., f = Max.,
Outputs Open
CE
≥
V
IH
,
V
CC
= Max.,
f = Max., Outputs Open
CE
≥
V
HC
,
V
CC
= Max.,
f = 0, Outputs Open,
V
IN
≤
V
LC
or V
IN
≥
V
HC
Unit
Comm'l
Mil.
Comm'l
mA
mA
mA
mA
I
SB1
—
15
mA
Document #
SRAM109
REV A
Page 3 of 10
P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Symbol
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
RCS
t
RCH
t
PU
t
PD
Parameter
Read Cycle Time
Address Access
Time
Chip Enable
Access Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Read Command
Setup Time
Read Command
Hold Time
Chip Enable to
Power Up Time
Chip Disable to
Power Down Time
-12
Min Max
12
12
12
2
2
6
0
0
0
12
-15
15
15
15
2
2
7
0
0
0
15
0
0
0
3
3
20
-20
25
20
20
-25
-35
Max Min Max
35
25
25
35
35
3
3
10
15
0
0
0
25
25
Min Max Min Max Min
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
3
9
0
0
0
20
1552 Tbl 10
READ CYCLE NO. 1 (ADDRESS controlled)
(5, 6)
READ CYCLE NO. 2 (CE controlled)
(5, 7)
CE
Notes:
5.
WE
is HIGH for READ cycle.
6.
CE
is LOW for READ cycle.
7. ADDRESS must be valid prior to, or coincident with,
CE
transition LOW.
8. Transition is measured ±200mV from steady state voltage prior to
change, with loading as specified in Figure 1.
9. Read Cycle Time is measured from the last valid address to the first
transitioning address.
Document #
SRAM109
REV A
Page 4 of 10
P4C1681, P4C1682
AC ELECTRICAL CHARACTERISTICS—WRITE CYCLE
(V
CC
= 5V ± 10%, All Temperature Ranges)
(2)
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
t
AWE
t
ADV
†
£
Parameter
Write Cycle Time
Chip Enable Time
to End of Write
Address Valid to
End of Write
Address Set-up
Time
Write Pulse Width
Address Hold
Time
Data Valid to
End of Write
Data Hold Time
Write Enable to
Output in High Z
†
Output Active to
End of Write
Write Enable to
Data-out Valid
£
Data-in Valid to
Data-out Valid
-12
Min Max
12
12
12
0
12
0
7
0
4
0
12
12
-15
15
15
15
0
15
0
8
0
5
0
15
15
0
18
18
18
0
18
0
10
0
-20
-25
20
20
20
0
20
0
10
0
7
0
20
20
25
25
7
-35
Max Min Max
30
25
25
0
25
0
15
0
13
0
30
30
Min Max Min Max Min
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
P4C1682 only.
P4C1681 only.
WRITE CYCLE NO. 1 (WE controlled)
(10)
WE
Notes:
10.
CE
and
WE
must be LOW for WRITE cycle.
11. If
CE
goes HIGH simultaneously with
WE
HIGH, the output
remains in a high impedance state.
12. Write Cycle Time is measured from the last valid address to the
first transitioning address.
Document #
SRAM109
REV A
Page 5 of 10
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