SAM50FA_1 datasheet, PDF - EEWORLD Datasheet

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SAM50FA_1: Description0.5 A, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size51KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SAM50FA_1 Overview

0.5 A, SILICON, SIGNAL DIODE

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SAM50FA

Designer’s Data Sheet

Part Number / Ordering Information

SAM 50

⏐

1/

FA

⏐

L

_ _ __

⏐

L

Screening

2/

= None

TX = TX Level

TXV = TXV Level

S = S Level

•

0.5 Amp

5000 VOLTS

150 nsec

HIGH VOLTAGE

RECTIFIER

FEATURES:

Ultra Fast and Fast Recovery: 150 nsec

Maximum

Hermetically Sealed Surface Mount Package

Void Free Construction

Metallurgically Bonded

175°C Maximum Operating Temperature

TX, TXV, and Space Level Screening Available

2/

Package

___ = Axial

SMS = Surface Mount Square Tab

Recovery Time

F = Fast Recovery

L

Voltage

50 = 5000

Maximum Ratings

Peak Inverse Voltage

Average Rectified Forward Current

Maximum Reverse Current

Maximum Forward Voltage

@ I

F

= 500 mA

Maximum Surge Current 1 Cycle

Maximum Reverse Recovery Time

Maximum Junction Capacitance

(fT = 1MHz @ 100 Volts)

Symbol

PIV

25ºC

100ºC

25ºC

100ºC

Io

I

R

V

F

I

FSM

trr

C

J

R

θJL

/ R

θJE

Axial Leaded

Value

5000

500

300

3.0

15

13

25

150

10

18

Units

Volts

mA

μA

Volts

Amps

nsec

pf

°C/W

SMS

Typical Thermal Impedance (L=3/8”)

1/ For Ordering Information, Price, and Availability – Contact Factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Operating and testing over 10,000 V/inch may require encapsulation or

immersion in a suitable dielectric material.

4/ Max. forward voltage measured with instantaneous forward pulse of

300µsec minimum.

5/ Max. lead/end tab temp. for soldering is 250°C, 3/8”from the case for 5 sec

maximum.

6/ Operating and storage temperature: -65°C to +175°C.

7/ Reverse Recovery Test Conditions: IF=.5A, IR=1mA, IRR=.25A, TA=25°C.

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RV0033C

DOC

SAM50FA_1 Related Products

	SAM50FA_1	SAM50FASMSS	SAM50FASMSTX	SAM50FASMSTXV
Description	0.5 A, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE
package instruction	-	E-LELF-R2	E-LELF-R2	E-LELF-R2
Contacts	-	2	2	2
Reach Compliance Code	-	compli	compli	compli
ECCN code	-	EAR99	EAR99	EAR99
Is Samacsys	-	N	N	N
Other features	-	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
Shell connection	-	ISOLATED	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	-	E-LELF-R2	E-LELF-R2	E-LELF-R2
Number of components	-	1	1	1
Number of terminals	-	2	2	2
Maximum output current	-	0.5 A	0.5 A	0.5 A
Package body material	-	GLASS	GLASS	GLASS
Package shape	-	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL
Package form	-	LONG FORM	LONG FORM	LONG FORM
Certification status	-	Not Qualified	Not Qualified	Not Qualified
Maximum reverse recovery time	-	0.15 µs	0.15 µs	0.15 µs
surface mount	-	YES	YES	YES
Terminal form	-	WRAP AROUND	WRAP AROUND	WRAP AROUND
Terminal location	-	END	END	END
Base Number Matches	-	1	1	1

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