SAM50FASMSS datasheet, PDF - EEWORLD Datasheet

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SAM50FASMSS: Description0.5 A, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size51KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SAM50FASMSS Overview

0.5 A, SILICON, SIGNAL DIODE

SAM50FASMSS Parametric

Parameter Name	Attribute value
package instruction	E-LELF-R2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Other features	METALLURGICALLY BONDED
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	E-LELF-R2
Number of components	1
Number of terminals	2
Maximum output current	0.5 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Certification status	Not Qualified
Maximum reverse recovery time	0.15 µs
surface mount	YES
Terminal form	WRAP AROUND
Terminal location	END
Base Number Matches	1

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Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-7855 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

SAM50FA

Designer’s Data Sheet

Part Number / Ordering Information

SAM 50

⏐

_ _ __

⏐

Screening

= None

TX = TX Level

TXV = TXV Level

S = S Level

•

0.5 Amp

5000 VOLTS

150 nsec

HIGH VOLTAGE

RECTIFIER

FEATURES:

Ultra Fast and Fast Recovery: 150 nsec

Maximum

Hermetically Sealed Surface Mount Package

Void Free Construction

Metallurgically Bonded

175°C Maximum Operating Temperature

TX, TXV, and Space Level Screening Available

Package

___ = Axial

SMS = Surface Mount Square Tab

Recovery Time

F = Fast Recovery

Voltage

50 = 5000

Maximum Ratings

Peak Inverse Voltage

Average Rectified Forward Current

Maximum Reverse Current

Maximum Forward Voltage

@ I

= 500 mA

Maximum Surge Current 1 Cycle

Maximum Reverse Recovery Time

Maximum Junction Capacitance

(fT = 1MHz @ 100 Volts)

Symbol

PIV

25ºC

100ºC

25ºC

100ºC

FSM

trr

θJL

/ R

θJE

Axial Leaded

Value

5000

500

300

3.0

150

Units

Volts

μA

Volts

Amps

nsec

°C/W

SMS

Typical Thermal Impedance (L=3/8”)

1/ For Ordering Information, Price, and Availability – Contact Factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Operating and testing over 10,000 V/inch may require encapsulation or

immersion in a suitable dielectric material.

4/ Max. forward voltage measured with instantaneous forward pulse of

300µsec minimum.

5/ Max. lead/end tab temp. for soldering is 250°C, 3/8”from the case for 5 sec

maximum.

6/ Operating and storage temperature: -65°C to +175°C.

7/ Reverse Recovery Test Conditions: IF=.5A, IR=1mA, IRR=.25A, TA=25°C.

NOTE:

All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RV0033C

DOC

SAM50FASMSS Related Products

	SAM50FASMSS	SAM50FASMSTX	SAM50FASMSTXV	SAM50FA_1
Description	0.5 A, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE	0.5 A, SILICON, SIGNAL DIODE
package instruction	E-LELF-R2	E-LELF-R2	E-LELF-R2	-
Contacts	2	2	2	-
Reach Compliance Code	compli	compli	compli	-
ECCN code	EAR99	EAR99	EAR99	-
Is Samacsys	N	N	N	-
Other features	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	-
Shell connection	ISOLATED	ISOLATED	ISOLATED	-
Configuration	SINGLE	SINGLE	SINGLE	-
Diode component materials	SILICON	SILICON	SILICON	-
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	-
JESD-30 code	E-LELF-R2	E-LELF-R2	E-LELF-R2	-
Number of components	1	1	1	-
Number of terminals	2	2	2	-
Maximum output current	0.5 A	0.5 A	0.5 A	-
Package body material	GLASS	GLASS	GLASS	-
Package shape	ELLIPTICAL	ELLIPTICAL	ELLIPTICAL	-
Package form	LONG FORM	LONG FORM	LONG FORM	-
Certification status	Not Qualified	Not Qualified	Not Qualified	-
Maximum reverse recovery time	0.15 µs	0.15 µs	0.15 µs	-
surface mount	YES	YES	YES	-
Terminal form	WRAP AROUND	WRAP AROUND	WRAP AROUND	-
Terminal location	END	END	END	-
Base Number Matches	1	1	1	-

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