IR210SG12H datasheet, PDF - EEWORLD Datasheet

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IR210SG12H: DescriptionSilicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 0.210 X 0.210 INCH, DIE-3; CategoryAnalog mixed-signal IC Trigger device; File Size17KB，3 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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IR210SG12H Overview

Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 0.210 X 0.210 INCH, DIE-3

IR210SG12H Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Maximum DC gate trigger current	60 mA
Maximum DC gate trigger voltage	1.9 V
Maximum holding current	125 mA
JESD-30 code	S-XUUC-N3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Off-state repetitive peak voltage	1200 V
Repeated peak reverse voltage	1200 V
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	NO LEAD
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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Bulletin I0204J 02/97

IR210SG12HCB

PHASE CONTROL THYRISTORS

Square 210 mils

1200 V

Glassivated MESA

Junction Size:

Wafer Size:

RRM

Class:

Passivation Process:

Reference IR Packaged Part:

25RIA Series

Major Ratings and Characteristics

Parameters

RRM

Maximum On-state Voltage

Reverse Breakdown Voltage

Max. Required DC Gate Current to Trigger

Max. Required DC Gate Voltage to Trigger

Holding Current Range

Maximum Latching Current

Units

1.5 V

1200 V

60 mA

1.9 V

10 to 125 mA

200 mA

Test Conditions

= 25°C, I

= 25 A

= 25°C, I

RRM

= 100 µA

(1)

= 25° C, anode supply = 6 V, resistive load

Anode supply = 6 V, resistive load

(1)

Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Wafer Diameter

Wafer Thickness

Maximum Width of Sawing Line

Reject Ink Dot Size

Ink Dot Location

Recommended Storage Environment

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

210 x 210 mils (see drawing)

100 mm, with std. < 100 > flat

370 µm ± 10 µm

130 µm

0.25 mm diameter minimum

See drawing

Storage in original container, in dessicated

nitrogen, with no contamination

www.irf.com

IR210SG12H Related Products

	IR210SG12H	IR210SG12HCB
Description	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 0.210 X 0.210 INCH, DIE-3	Silicon Controlled Rectifier, 1200V V(DRM), 1200V V(RRM), 1 Element, 4 INCH, WAFER
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Parts packaging code	DIE	WAFER
package instruction	UNCASED CHIP, S-XUUC-N3	UNCASED CHIP, O-XUUC-N
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Configuration	SINGLE	SINGLE
Maximum DC gate trigger current	60 mA	60 mA
Maximum DC gate trigger voltage	1.9 V	1.9 V
Maximum holding current	125 mA	125 mA
JESD-30 code	S-XUUC-N3	O-XUUC-N
JESD-609 code	e0	e0
Number of components	1	1
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	SQUARE	ROUND
Package form	UNCASED CHIP	UNCASED CHIP
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified
Off-state repetitive peak voltage	1200 V	1200 V
Repeated peak reverse voltage	1200 V	1200 V
surface mount	YES	YES
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	NO LEAD	NO LEAD
Terminal location	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR

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