N & P-Ch Enhancement Mode Power MOSFET
Parameter Name | Attribute value |
Maker | SECOS |
package instruction | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code | compliant |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 40 V |
Maximum drain current (ID) | 6.5 A |
Maximum drain-source on-resistance | 0.032 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G8 |
Number of components | 2 |
Number of terminals | 8 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL AND P-CHANNEL |
Maximum pulsed drain current (IDM) | 50 A |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |