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SSG4543C

Description
N & P-Ch Enhancement Mode Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size1MB,6 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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SSG4543C Overview

N & P-Ch Enhancement Mode Power MOSFET

SSG4543C Parametric

Parameter NameAttribute value
MakerSECOS
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)6.5 A
Maximum drain-source on-resistance0.032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)50 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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