EPROM, 8KX8, 250ns, CMOS, CDIP28,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | FUJITSU |
Parts packaging code | DIP |
package instruction | DIP, DIP28,.6 |
Contacts | 28 |
Reach Compliance Code | compliant |
Maximum access time | 250 ns |
I/O type | COMMON |
JESD-30 code | R-XDIP-T28 |
JESD-609 code | e0 |
memory density | 65536 bit |
memory width | 8 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
power supply | 5 V |
Programming voltage | 21 V |
Certification status | Not Qualified |
Maximum standby current | 0.0001 A |
Maximum slew rate | 0.03 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
MBM27C64-25Z | MBM27C64-25CV | MBM27C64-30Z | MBM27C64-20CV | MBM27C64-30Z-W | MBM27C64-25Z-X | |
---|---|---|---|---|---|---|
Description | EPROM, 8KX8, 250ns, CMOS, CDIP28, | EPROM, 8KX8, 250ns, CMOS, CQCC32, | EPROM, 8KX8, 300ns, CMOS, CDIP28, | EPROM, 8KX8, 200ns, CMOS, CQCC32, | EPROM, 8KX8, 300ns, CMOS, CDIP28, | IC,EPROM,8KX8,CMOS,DIP,28PIN,CERAMIC |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | DIP, DIP28,.6 | QCCN, LCC32,.45X.55 | DIP, DIP28,.6 | QCCN, LCC32,.45X.55 | DIP, DIP28,.6 | DIP, DIP28,.6 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
Maximum access time | 250 ns | 250 ns | 300 ns | 200 ns | 300 ns | 250 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDIP-T28 | R-XQCC-N32 | R-XDIP-T28 | R-XQCC-N32 | R-XDIP-T28 | R-XDIP-T28 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
memory width | 8 | 8 | 8 | 8 | 8 | 8 |
Number of terminals | 28 | 32 | 28 | 32 | 28 | 28 |
word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 125 °C | 85 °C |
organize | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
encapsulated code | DIP | QCCN | DIP | QCCN | DIP | DIP |
Encapsulate equivalent code | DIP28,.6 | LCC32,.45X.55 | DIP28,.6 | LCC32,.45X.55 | DIP28,.6 | DIP28,.6 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE | IN-LINE |
Programming voltage | 21 V | 21 V | 21 V | 21 V | 21 V | 21 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | YES | NO | YES | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | QUAD | DUAL | QUAD | DUAL | DUAL |
Maker | FUJITSU | - | FUJITSU | FUJITSU | FUJITSU | - |
Parts packaging code | DIP | QFJ | DIP | QFJ | - | - |
Contacts | 28 | 32 | 28 | 32 | - | - |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | - |
Maximum standby current | 0.0001 A | 0.0001 A | 0.0001 A | 0.0001 A | - | - |
Maximum slew rate | 0.03 mA | 0.03 mA | 0.03 mA | 0.03 mA | - | 0.03 mA |