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DF10S_NL

Description
Bridge Rectifier Diode, 1 Phase, 1.5A, 1000V V(RRM), Silicon, SDIP-4
CategoryDiscrete semiconductor    diode   
File Size117KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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DF10S_NL Overview

Bridge Rectifier Diode, 1 Phase, 1.5A, 1000V V(RRM), Silicon, SDIP-4

DF10S_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeDIP
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codecompliant
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation3.1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
DF005S - DF10S — Bridge Rectifiers
May 2009
DF005S - DF10S
Bridge Rectifiers
Features
Surge overload rating: 50 amperes peak.
Glass passivated junction.
Low leakage.
UL certified, UL #E111753 and E326243.
+
~
~
-
SDIP
Absolute Maximum Ratings *
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
STG
T
J
T
A
= 25° unless otherwise noted
C
Parameter
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage (Rated V
R
)
Average Recitified Forward Current
@ T
A
= 40°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
Value
005S 01S
50
35
50
100
70
100
02S
200
140
200
04S
400
280
400
1.5
50
06S
600
420
600
08S
800
560
800
10S
1000
700
1000
Units
V
V
V
A
A
°C
°C
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient, * per leg
Parameter
Value
3.1
40
Units
W
°C/W
* Device mounted on PCB with 0.5
×
0.5” (13
×
13mm).
Electrical Characteristics
Symbol
V
F
I
R
C
T
A
= 25° unless otherwise noted
Parameter
Forward Voltage, per element @ 1.0A
Reverse Current, per element @ Rated V
R
T
A
= 25°C
T
A
= 125°C
I
2
t Rating for Fusing
t < 8.35ms
V
R
= 4.0v, f = 1.0MHz
Total Capacitance, per leg
Value
1.1
50
500
10
25
Units
V
µA
µA
A
2
s
pF
C
T
© 2009 Fairchild Semiconductor Corporation
DF005S - DF10S Rev. A1
1
www.fairchildsemi.com
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