Power Field-Effect Transistor, 20A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | American Power Devices Inc. |
| Parts packaging code | TO-252 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V |
| Maximum drain current (ID) | 20 A |
| Maximum drain-source on-resistance | 0.045 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252 |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 40 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 40 |
| Transistor component materials | SILICON |
| APM4034NUC-TRL | APM4034NUC-TUL | |
|---|---|---|
| Description | Power Field-Effect Transistor, 20A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 | Power Field-Effect Transistor, 20A I(D), 40V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 |
| Is it lead-free? | Lead free | Lead free |
| Is it Rohs certified? | conform to | conform to |
| Maker | American Power Devices Inc. | American Power Devices Inc. |
| Parts packaging code | TO-252 | TO-252 |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 4 | 4 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 40 V | 40 V |
| Maximum drain current (ID) | 20 A | 20 A |
| Maximum drain-source on-resistance | 0.045 Ω | 0.045 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252 | TO-252 |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 40 A | 40 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | 40 | 40 |
| Transistor component materials | SILICON | SILICON |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
