Data Sheet
Super Fast Recovery Diode
RFUS20TM6S
Series
Ultra Fast Recovery
Dimensions(Unit
: mm)
+0.3
-0.1
+0.3
-0.1
+0.2
-0.1
Structure
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial planar
ot
Absolute
maximum ratings
(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
V
RM
Reverse voltage
V
R
Average rectified forward current
Io
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+0.4
-0.2
Applications
General rectification
(1)
(2) (3)
+0.1
-0.05
R
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave, Resistance load,
Forward current surge peak
Junction temperature
Storage temperature
I
FSM
Tj
Tstg
Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
N
Electrical
characteristics(Tj=25C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
I
F
=20A
V
R
=600V
I
F
=0.5A,I
R
=1A,Irr=0.25×I
R
junction to case
Min.
－
－
－
－
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
or
(1)
(2)
(3)
Limits
600
600
20
Unit
V
V
A
A
°C
°C
100
150
55
to
150
Typ.
2.3
0.05
23
－
Max.
2.8
10
35
1.8
Unit
V
μA
ns
C
/ W
2011.06 - Rev.A
RFUS20TM6S
Electrical
characteristics curves
100
Tj=125C
Tj=150C
100000
Tj=150C
1000
Data Sheet
REVERSE CURRENT : I
R
(nA)
FORWARD CURRENT : I
F
(A)
10000
Tj=125C
10
Tj=25C
Tj=75C
1000
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
f=1MHz
Tj=25C
100
100
1
Tj=75C
10
Tj=25C
0.1
0
1000
2000
3000
4000
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1
0
50
100
150
200
250
300
350
10
0
5
2500
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REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
450
445
440
435
430
425
420
415
410
405
400
FORWARD VOLTAGE : V
F
(mV)
REVERSE CURRENT : I
R
(nA)
2400
2300
2200
2100
2000
1900
AVE : 2113mV
100
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
T½=25C
I
F
=20A
n=20pcs
T½=25C
V
R
=600V
n=20pcs
10
AVE : 61.8nA
1
V
F
DISPERSION MAP
I
R
DISPERSION MAP
300
40
35
30
25
20
15
10
1000
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
200
150
100
50
0
PEAK SURGE
FORWARD CURRENT : I
8.3ms
FSM
(A)
250
REVERSE RECOVERY TIME : trr(ns)
I
FSM
1cyc
T½=25C
I
F
=0.5A
I
R
=1A
Irr=0.25×I
R
n=10pcs
100
10
AVE : 156A
AVE:26.1ns
I
FSM
R
1
I
FSM
DISRESION MAP
trr DISPERSION MAP
1
ot
1000
15
10
TRANSIENT
THAERMAL IMPEDANCE : Rth (C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
I
FSM
time
12
N
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
9
100
AVE : 11.0kV
6
1
AVE : 1.20kV
3
10
1
10
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
100
0
C=200pF
R=0
C=100pF
R=1.5k
0.1
0.001
0.01
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
or
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
Ta=25C
f=1MHz
V
R
=0V
n=10pcs
AVE : 415.9pF
Ct DISPERSION MAP
8.3ms
8.3ms
1cyc.
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
Rth(j-c)
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
2011.06 - Rev.A
RFUS20TM6S
Data Sheet
0A
90
80
35
D.C.
half sin wave
D.C.
D=0.2
50
40
30
20
10
0
0
5
10
15
20
25
30
35
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
D=0.1
D=0.05
D=0.8
D=0.5
30
0V
t
T
D=0.8
D=0.5
Io
V
R
D=t/T
V
R
=480V
Tj=150C
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
70
FORWARD POWER
DISSIPATION : Pf(W)
60
25
20
half sin wave
15
D=0.2
5
0
0
D=0.05
D=0.1
N
ot
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© 2011 ROHM Co., Ltd. All rights reserved.
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CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
30
60
90
120
150
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3/3
or
2011.06 - Rev.A
10
Datasheet
Notice
Precaution on using ROHM Products
1.
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(Note 1)
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,
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S, NH
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, SO
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, and NO
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3.
5.
6.
Please verify and confirm characteristics of the final or mounted products in using the Products.
N
ot
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
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8.
9.
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1.
2.
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For details, please refer to ROHM Mounting specification
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4.
The Products are not subject to radiation-proof design.
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Datasheet
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Precaution Regarding Intellectual Property Rights
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This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
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