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APTM120U100S-ALN

Description
Power Field-Effect Transistor, 116A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-4
CategoryDiscrete semiconductor    The transistor   
File Size302KB,6 Pages
ManufacturerADPOW
Websitehttp://www.advancedpower.com/
Download Datasheet Parametric View All

APTM120U100S-ALN Overview

Power Field-Effect Transistor, 116A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MODULE-4

APTM120U100S-ALN Parametric

Parameter NameAttribute value
MakerADPOW
package instructionFLANGE MOUNT, R-XUFM-X4
Reach Compliance Codeunknown
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)3200 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage1200 V
Maximum drain current (ID)116 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUFM-X4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)464 A
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsSWITCHING
Transistor component materialsSILICON
APTM120U100S-AlN
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
V
DSS
= 1200V
R
DSon
= 100mΩ max @ Tj = 25°C
I
D
= 116A @ Tc = 25°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
S
Q1
G
S
D
SK
G
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120U100S–AlN Rev 0
Max ratings
1200
116
86
464
±30
100
3290
24
50
3200
Unit
V
A
V
mΩ
W
A
mJ
July, 2004
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