APT10040B2LC
APT10040LLC
1000V 25A 0.400
W
B2LC
POWER MOS VI
TM
Power MOS VI
TM
is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achieved by optimizing the manufacturing process to minimize C
iss
and C
rss
.
Lower gate charge coupled with Power MOS VI
TM
optimized gate layout,
delivers exceptionally fast switching speeds.
• Identical Specifications:
T-MAX™
or TO-264 Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
T-MAX™
TO-264
LLC
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT10040
UNIT
Volts
Amps
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
C N
TE IO
D AT
E
C
M
N
R
A
V
FO
D IN
A
1000
25
100
±30
±40
625
5.0
-55 to 150
300
25
50
(Repetitive and Non-Repetitive)
1
4
Volts
Watts
W/°C
°C
Amps
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1000
25
0.400
25
250
3
5
±100
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
nA
Volts
6-2000
050-5979
rev-
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT10040 B2LC - LLC
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= 0.5 I
D[Cont.]
@ 25°C
V
GS
= 15V
MIN
TYP
MAX
UNIT
5800
690
220
190
33
18
14
48
9
nC
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
L
A
IC
N
H
EC ON
T I
D AT
E
C
M
N
R
A
O
V
D INF
A
113
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D[Cont.]
@ 25°C
MIN
TYP
(Body Diode)
(Body Diode)
2
ns
MAX
UNIT
Amps
Volts
ns
µC
25
100
1.3
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
1060
25.5
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.20
40
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 9.6mH, R = 25W, Peak I = 25A
j
G
L
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Collector
Collector
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
6-2000
Gate
Collector
Emitter
Gate
Collector
Emitter
rev-
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
050-5979
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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