TSB772_11 datasheet, PDF - EEWORLD Datasheet

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TSB772_11: DescriptionLow Vcesat PNP Transistor; File Size84KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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TSB772_11 Overview

Low Vcesat PNP Transistor

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TSB772

Low Vcesat PNP Transistor

TO-126

Pin Definition:

1. Emitter

2. Collector

3. Base

PRODUCT SUMMARY

CBO

CEO

CE(SAT)

-50V

-30V

-3A

-0.5V @ I

/ I

= -2A / -200mA

Features

●

Low V

CE(SAT)

-0.3 @ I

/ I

= 2A / 200mA (Typ.)

Complementary part with TSD882

Ordering Information

Part No.

TSB772CK B0

TSB772CK B0G

Package

TO-126

Packing

250pcs / Bulk

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

Note: “G” denote for Halogen Free Product

Absolute Maximum Rating

(Ta = 25

C unless otherwise noted)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Pulse

Ta = 25 C

Tc = 25 C

Symbol

CBO

CEO

EBO

STG

Limit

-50

-30

-5

-3

-7 (note)

+150

- 55 to +150

Unit

Operating Junction Temperature

Operating Junction and Storage Temperature Range

Note: Single pulse, Pw≤350us, Duty≤2%

Electrical Specifications

(Ta = 25

C unless otherwise noted)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

Conditions

= -50uA, I

= 0

= -1mA, I

= 0

= -50uA, I

= 0

= -30V, I

= 0

= 3V, I

= 0

/ I

= -2A / -200mA

/ I

= -2A / -200mA

= -2V, I

= -1A

=-5V, I

=-100mA,

f=100MHz

Symbol

CBO

CEO

EBO

CBO

EBO

CE(SAT)

BE(SAT)

Cob

Min

-50

-30

-5

100

Typ

-0.3

-1

Max

-1

-0.5

-2

500

Unit

MHz

Output Capacitance

= -10V, f=1MHz

* Pulse Test: Pulse Width

≤380uS,

Duty Cycle≤2%

1/4

Version: E11

TSB772_11 Related Products

	TSB772_11	TSB772CKB0
Description	Low Vcesat PNP Transistor	Low Vcesat PNP Transistor

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