8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | DIOTEC |
package instruction | R-PSIP-W4 |
Contacts | 4 |
Reach Compliance Code | compliant |
Other features | UL RECOGNIZED |
Configuration | BRIDGE, 4 ELEMENTS |
Diode component materials | SILICON |
Diode type | BRIDGE RECTIFIER DIODE |
JESD-30 code | R-PSIP-W4 |
Maximum non-repetitive peak forward current | 275 A |
Number of components | 4 |
Phase | 1 |
Number of terminals | 4 |
Maximum output current | 8 A |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 800 V |
surface mount | NO |
Terminal form | WIRE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Base Number Matches | 1 |
B380C7000-4000A | B125C7000-4000A | B250C7000-4000A | B40C7000-4000A | B500C7000-4000A | B80C7000-4000A | |
---|---|---|---|---|---|---|
Description | 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 250 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 80 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE | 8 A, 160 V, SILICON, BRIDGE RECTIFIER DIODE |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to |
Maker | DIOTEC | DIOTEC | DIOTEC | DIOTEC | DIOTEC | DIOTEC |
package instruction | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 |
Contacts | 4 | 4 | 4 | 4 | 4 | 4 |
Reach Compliance Code | compliant | compliant | compli | compli | compliant | compliant |
Other features | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED | UL RECOGNIZED |
Configuration | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS | BRIDGE, 4 ELEMENTS |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE | BRIDGE RECTIFIER DIODE |
JESD-30 code | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 | R-PSIP-W4 |
Maximum non-repetitive peak forward current | 275 A | 275 A | 275 A | 275 A | 275 A | 275 A |
Number of components | 4 | 4 | 4 | 4 | 4 | 4 |
Phase | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 4 | 4 | 4 | 4 | 4 | 4 |
Maximum output current | 8 A | 8 A | 8 A | 8 A | 8 A | 8 A |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 800 V | 250 V | 600 V | 80 V | 1000 V | 160 V |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Base Number Matches | 1 | 1 | - | - | 1 | 1 |