HMC525
v02.1007
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
Typical Applications
The HMC525 is ideal for:
• Point-to-Point and Point-to-Multi-Point Radio
Features
Wide IF Bandwidth: DC - 3.5 GHz
Image Rejection: 40 dB
LO to RF Isolation: 50 dB
High Input IP3: +23 dBm
Die Size: 1.49 x 1.14 x 0.1 mm
3
MIXERS - I/Q MIXERS / IRM - CHIP
• VSAT
Functional Diagram
General Description
The HMC525 is a compact I/Q MMIC mixer which can
be used as either an Image Reject Mixer or a Single
Sideband Upconverter. The chip utilizes two standard
Hittite double balanced mixer cells and a 90 degree
hybrid fabricated in a GaAs MESFET process. All
data shown below is taken with the chip mounted in
a 50 Ohm test fixture and includes the effects of 1 mil
diameter x 20 mil length bond wires on each port. A
low frequency quadrature hybrid was used to produce
a 100 MHz USB IF output. This product is a much
smaller alternative to hybrid style Image Reject Mixers
and Single Sideband Upconverter assemblies.
Electrical Specifi cations,
T
A
= +25° C, IF= 100 MHz, LO = +15 dBm*
Parameter
Frequency Range, RF/LO
Frequency Range, IF
Conversion Loss (As IRM)
Image Rejection
1 dB Compression (Input)
LO to RF Isolation
LO to IF Isolation
IP3 (Input)
Amplitude Balance
Phase Balance
33
17
20
Min.
Typ.
4.0 - 8.5
DC - 3.5
7.5
35
+14
45
20
+23
0.3
8
40
17
10
30
Max.
Min.
Typ.
5.5 - 7.5
DC - 3.5
7.5
40
+15
50
20
+23
0.2
4
9.5
Max.
Units
GHz
GHz
dB
dB
dBm
dB
dB
dBm
dB
Deg
* Unless otherwise noted, all measurements performed as downconverter.
3 - 94
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
v01.1007
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
Image Rejection vs. Temperature
60
50
Data taken As IRM With External IF 90° Hybrid
Conversion Gain vs. Temperature
0
CONVERSION GAIN (dB)
-5
IMAGE REJECTION (dB)
40
30
20
10
0
3
MIXERS - I/Q MIXERS / IRM - CHIP
3 - 95
+25C
+85C
-55C
-10
+25C
-15
+85C
-55C
-20
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
Conversion Gain vs. LO Drive
0
Return Loss
0
CONVERSION GAIN (dB)
-10
+11 dBm
+13 dBm
+15 dBm
+17 dBm
+19 dBm
RETURN LOSS (dB)
-5
-5
-10
-15
-15
RF
LO
-20
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
-20
3
4
5
6
7
8
9
FREQUENCY (GHz)
Input P1dB vs. Temperature
20
18
Input IP3 vs. LO Drive
30
25
16
P1dB (dBm)
IP3 (dBm)
14
12
10
8
6
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
5
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
+25C
+85C
-55C
20
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
15
10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
v01.1007
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
Quadrature Channel Data Taken Without IF 90° Hybrid
Isolations
-10
LO/IF2
-20
ISOLATION (dB)
-30
-40
-50
-60
-70
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
RESPONSE (dB)
-5
LO/IF1
RETURN LOSS
CONVERSION GAIN
IF Bandwidth*
0
3
MIXERS - I/Q MIXERS / IRM - CHIP
-10
RF/IF1
LO/RF
-15
-20
RF/IF2
-25
0.5
1
1.5
2
2.5
3
3.5
IF FREQUENCY (GHz)
Amplitude Balance vs. LO Drive
2
Phase Balance vs. LO Drive
10
5
0
-5
-10
-15
-20
1
0
-1
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
PHASE BALANCE (degrees)
AMPLITUDE BALANCE (dB)
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-2
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
Upconverter Performance Conversion
Gain vs. LO Drive
0
Upconverter Performance Sideband
Rejection vs. LO Drive
0
SIDEBAND REJECTION (dBc)
-10
-20
-30
-40
-50
-60
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
CONVERSION GAIN (dB)
-5
-10
LO = +11 dBm
LO = +13 dBm
LO = +15 dBm
LO = +17 dBm
LO = +19 dBm
-15
-20
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
3
4
5
6
7
8
9
RF FREQUENCY (GHz)
* Conversion gain data taken with external IF 90 ° hybrid
3 - 96
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
v01.1007
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
Harmonics of LO
nLO Spur at RF Port
LO Freq. (GHz)
1
3.5
4.5
5.5
6.5
7.5
8.5
40
43
51
59
48
44
2
40
45
57
63
66
65
3
54
58
48
64
64
60
4
50
53
67
56
62
67
MxN Spurious Outputs
nLO
mRF
0
1
2
3
4
0
xx
32
89
89
89
1
-11
0
62
89
89
2
32
42
74
89
89
3
23
51
65
82
89
4
51
66
89
89
89
3
MIXERS - I/Q MIXERS / IRM - CHIP
3 - 97
LO = +15 dBm
Values in dBc below input LO level measured at RF Port.
RF = 5.6 GHz @ -10 dBm
LO = 5.5 GHz @ +15 dBm
Data taken without IF hybrid
All values in dBc below IF power level
Absolute Maximum Ratings
RF / IF Input
LO Drive
Channel Temperature
Continuous Pdiss (T=85°C)
(derate 9.7 mW/°C above 85°C)
Thermal Resistance (R
TH
)
(junction to die bottom)
Storage Temperature
Operating Temperature
+20 dBm
+27 dBm
150°C
631 mW
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
Standard
Alternate
[2]
GP-2 (Gel Pack)
103 °C/W
-65 to +150 °C
-55 to +85 deg °C
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALIZATION: GOLD
5. BOND PAD METALIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. CONNECTION NOT REQUIRED FOR
UNLABELED BOND PADS.
8. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC525
v01.1007
GaAs MMIC I/Q MIXER
4.0 - 8.5 GHz
Pad Descriptions
Pad Number
Function
Description
This pad is AC coupled and matched to
50 Ohms.
Interface Schematic
1
RF
3
4
LO
This pad is AC coupled and matched to
50 Ohms.
This pad is DC coupled. For applications not requir-
ing operation to DC, this port should be DC blocked
externally using a series capacitor whose value has
been chosen to pass the necessary IF frequency
range. For operation to DC, this pad must not
source/sink more than 3mA of current or die non-
function and possible die failure will result. Pads 5
and 6 are alternate IF ports.
The backside of the die must be connected
to RF/DC ground.
MIXERS - I/Q MIXERS / IRM - CHIP
2 (5)
IF2
3 (6)
IF1
GND
Assembly Diagrams
3 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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