HMC590LP5 / 590LP5E
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Typical Applications
The HMC590LP5 / HMC590LP5E is ideal for use as a
power amplifier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
Features
Saturated Output Power: +31.5 dBm @ 23% PAE
Output IP3: +40 dBm
Gain: 21 dB
DC Supply: +7V @ 820 mA
50 Ohm Matched Input/Output
QFN Leadless SMT Packages, 25 mm
2
11
LINEAR & POWER AMPLIFIERS - SMT
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
General Description
The HMC590LP5 & HMC590LP5E are high dynamic
range GaAs PHEMT MMIC 1 Watt Power Amplifiers
which operate from 6 to 9.5 GHz. The amplifier pro-
vides 21 dB of gain, +31 dBm of saturated power,
and 23% PAE from a +7welV supply. This 50 Ohm
matched amplifier does not require any external
components and the RF I/Os are DC blocked for ro-
bust operation. For applications which require op-
timum OIP3, Idd should be set for 520 mA, to yield
+40 dBm OIP3. For applications which require
optimum output P1dB, Idd should be set for 820 mA,
to yield +30 dBm Out-put P1dB.
Electrical Specifi cations,
T
A
= +25° C, Vdd = +7V, Idd = 820 mA
[1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical.
[2] Measurement taken at 7V @ 520mA, Pin/Tone = -15 dBm
[2]
Min.
Typ.
6-8
Max.
Min.
Typ.
6 - 9.5
Max.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
18
21
0.05
15
11
18
21
0.05
12
10
27
30
30.5
40
820
27.5
30.5
31
40
820
11 - 294
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC590LP5 / 590LP5E
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Broadband Gain & Return Loss
30
25
20
RESPONSE (dB)
15
Gain vs. Temperature
28
24
S21
S11
S22
GAIN (dB)
10
5
0
-5
-10
-15
-20
-25
4
5
6
7
8
20
16
+25C
+85C
-40C
11
9
9.5
10
12
8
9
10
11
12
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
-35
4
5
6
7
8
9
10
11
12
FREQUENCY (GHz)
RETURN LOSS (dB)
-10
-15
+25C
+85C
-40C
+25C
+85C
-40C
-20
-25
4
5
6
7
8
9
10
11
12
FREQUENCY (GHz)
P1dB vs. Temperature
35
Psat vs. Temperature
35
33
P1dB (dBm)
33
31
Psat (dBm)
31
29
+25C
+85C
-40C
29
+25C
+85C
-40C
27
27
25
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
25
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 295
LINEAR & POWER AMPLIFIERS - SMT
HMC590LP5 / 590LP5E
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
P1dB vs. Current
35
Psat vs. Current
35
33
P1dB (dBm)
33
31
Psat (dBm)
31
11
LINEAR & POWER AMPLIFIERS - SMT
29
520mA
620mA
720mA
820mA
29
520mA
620mA
720mA
820mA
27
27
25
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
25
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
Output IP3 vs. Temperature
7V @ 520 mA, Pin/Tone = -15 dBm
46
Power Compression @ 8 GHz,
7V @ 820 mA
35
Pout(dBm), GAIN (dB), PAE(%)
30
25
20
15
10
5
0
-14
Pout
Gain
PAE
42
IP3 (dBm)
38
34
+25C
+85C
-40C
30
26
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
-10
-6
-2
2
6
10
14
INPUT POWER (dBm)
Output IM3, 7V @ 520 mA
80
Output IM3, 7V @ 820 mA
80
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
60
IM3 (dBc)
IM3 (dBc)
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
60
40
40
20
20
0
-20
-16
-12
-8
-4
0
4
8
0
-20
-16
-12
-8
-4
0
4
8
Pin/Tone (dBm)
Pin/Tone (dBm)
11 - 296
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC590LP5 / 590LP5E
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Gain & Power vs. Supply Current @ 8 GHz
36
GAIN (dB), P1dB (dBm), Psat(dBm)
Gain & Power vs. Supply Voltage @ 8 GHz
34
GAIN (dB), P1dB (dBm), Psat(dBm)
32
30
28
26
24
22
20
18
6.5
Gain
P1dB
Psat
32
Gain
P1dB
Psat
28
24
20
11
7.5
16
940
1140
Idd SUPPLY CURRENT (mA)
1340
7
Vdd SUPPLY VOLTAGE (Vdc)
Reverse Isolation
vs. Temperature, 7V @ 820 mA
0
-10
-20
ISOLATION (dB)
-30
-40
-50
-60
-70
-80
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
+25C
+85C
-40C
Power Dissipation
6
5.5
5
4.5
4
3.5
3
-14
6 GHz
7 GHz
8 GHz
9 GHz
10 GHz
-10
-6
-2
2
6
10
14
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +7.0 Vdc)
Channel Temperature
Continuous Pdiss (T= 75 °C)
(derate 59.8 mW/°C above 75 °C)
Thermal Resistance
(channel to package bottom)
Storage Temperature
Operating Temperature
+8 Vdc
-2.0 to 0 Vdc
+12 dBm
175 °C
5.98 W
16.72 °C/W
-65 to +150 °C
-55 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+6.5
+7.0
+7.5
Idd (mA)
824
820
815
Note: Amplifi er will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 297
LINEAR & POWER AMPLIFIERS - SMT
POWER DISSIPATION (W)
HMC590LP5 / 590LP5E
v01.0107
GaAs PHEMT MMIC 1 WATT
POWER AMPLIFIER, 6.0 - 9.5 GHz
Outline Drawing
11
LINEAR & POWER AMPLIFIERS - SMT
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
HMC590LP5
HMC590LP5E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H590
XXXX
H590
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
11 - 298
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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