AP60T10GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
18mΩ
67A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T10GP)
are available for low-profile applications.
G
D
S
TO-220(P)
GD
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
3
S
TO-263(S)
Units
V
V
A
A
A
W
mJ
℃
℃
Rating
100
+20
67
42
250
167
288
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
0.75
40
62
Units
℃/W
℃/W
℃/W
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
1
201011024
AP60T10GS/P-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=28A
V
DS
=V
GS
, I
D
=250uA
V
DS
=25V, I
D
=28A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=28A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=28A
R
G
=2.5Ω,V
GS
=10V
R
D
=1.8Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
100
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
45
-
-
55
15
24
16
68
29
42
400
155
Max. Units
-
18
5
-
25
+100
90
-
-
-
-
-
-
-
-
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
o
2800 4500
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=28A, V
GS
=0V
I
S
=28A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
80
270
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting T
j
=25 C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=24A.
4.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP60T10GS/P-HF
200
100
T
C
= 25 C
160
o
10 V
9.0V
I
D
, Drain Current (A)
T
C
= 150 C
80
o
10V
9.0V
8.0V
I
D
, Drain Current (A)
8.0V
120
60
7.0V
80
40
7.0V
40
V
G
= 6.0 V
20
V
G
= 6 .0V
0
0
2
4
6
8
10
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
2.4
I
D
= 28A
V
G
= 10V
2.0
Normalized BV
DSS
(V)
1.1
Normalized R
DS(ON)
1.6
1
1.2
0.9
0.8
0.8
-50
0
50
100
150
0.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C)
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
30
1.6
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Normalized V
GS(th)
(V)
1.2
20
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP60T10GS/P-HF
12
4000
f=1.0MHz
I
D
= 28 A
10
V
GS
, Gate to Source Voltage (V)
8
V
DS
= 50 V
V
DS
= 60 V
V
DS
= 80 V
C (pF)
3000
C
iss
6
2000
4
1000
2
C
oss
C
rss
0
0
20
40
60
80
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
I
D
(A)
Operation in this
area limited by
R
DS(ON)
0.2
0.1
100us
0.1
0.05
P
DM
10
1ms
t
0.02
T
0.01
Single Pulse
T
c
=25
o
C
Single Pulse
1
0.1
1
10
100
10ms
100ms
DC
1000
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
RF/Wirelessly
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